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Elite Semiconductor
Elite Semiconductor


M12L2561616A

6 Bit x 4 Banks Synchronous DRAM



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M12L2561616A pdf
ESMT
SDRAM
FEATURES
y JEDEC standard 3.3V power supply
y LVTTL compatible with multiplexed address
y Four banks operation
y MRS cycle with address key programs
- CAS Latency ( 2 & 3 )
www.DataSheet-4UB.ucrosmt Length ( 1, 2, 4, 8 & full page )
- Burst Type ( Sequential & Interleave )
y All inputs are sampled at the positive going edge of the
system clock
y Burst Read single write operation
y DQM for masking
y Auto & self refresh
y 64ms refresh period (8K cycle)
M12L2561616A
4M x 16 Bit x 4 Banks
Synchronous DRAM
ORDERING INFORMATION
PRODUCT NO. MAX FREQ. PACKAGE COMMENTS
M12L2561616A-6TG 166MHz TSOP II
Pb-free
M12L2561616A-6BG 166MHz
BGA
Pb-free
M12L2561616A-7TG 143MHz TSOP II
Pb-free
M12L2561616A-7BG 143MHz
BGA
Pb-free
GENERAL DESCRIPTION
The M12L2561616A is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 16 bits.
Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle.
Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a
variety of high bandwidth, high performance memory system applications.
Pin Arrangement
VDD
DQ0
VDDQ
DQ1
DQ2
VSSQ
DQ3
DQ4
VDDQ
DQ5
DQ6
VSSQ
DQ7
VDD
LDQM
WE
CAS
RAS
CS
BA0
BA1
A10/AP
A0
A1
A2
A3
VDD
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
54 VSS
53 DQ15
52 VSSQ
51 DQ14
50 DQ13
49 VDDQ
48 DQ12
47 DQ11
46 VSSQ
45 DQ10
44 DQ9
43 VDDQ
42 DQ8
41 VSS
40 NC
39 UDQM
38 CLK
37 CKE
36 A12
35 A11
34 A9
33 A8
32 A7
31 A6
30 A5
29 A4
28 VSS
123 4567 89
A VSS DQ15 VSSQ
VDDQ DQ0 VDD
B DQ14 DQ13 VDDQ
C DQ12 DQ11 VSSQ
VSSQ DQ2 DQ1
VDDQ DQ4 DQ3
D DQ10 DQ9 VDDQ
VSSQ DQ6 DQ5
E
DQ8
NC
VSS
VDD LDQM DQ7
F UDQM CLK CKE
G
A12 A11
A9
CAS RAS
WE
BA0 BA1 CS
H A8 A7 A6
J
VSS
A5
A4
A0 A1 A10
A3 A2 VDD
Elite Semiconductor Memory Technology Inc.
Publication Date: Aug. 2007
Revision: 1.2
1/44



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M12L2561616A pdf
ESMT
BLOCK DIAGRAM
CLK
CKE
Clock
Generator
Address
www.DataSheet4U.com
CS
RAS
CAS
WE
Mode
Register
Row
Address
Buffer
&
Refresh
Counter
Column
Address
Buffer
&
Counter
M12L2561616A
Bank D
Bank C
Bank B
Bank A
Sense Amplifier
Column Decoder
Data Control Circuit
L(U)DQM
DQ
PIN DESCRIPTION
PIN
CLK
CS
CKE
A0 ~ A12
BA1, BA0
RAS
CAS
WE
L(U)DQM
DQ0 ~ DQ15
VDD / VSS
VDDQ / VSSQ
N.C
NAME
System Clock
Chip Select
Clock Enable
Address
Bank Select Address
Row Address Strobe
Column Address Strobe
Write Enable
Data Input / Output Mask
Data Input / Output
Power Supply / Ground
Data Output Power / Ground
No Connection
INPUT FUNCTION
Active on the positive going edge to sample all inputs
Disables or enables device operation by masking or enabling all
inputs except CLK , CKE and L(U)DQM
Masks system clock to freeze operation from the next clock cycle.
CKE should be enabled at least one cycle prior new command.
Disable input buffers for power down in standby.
Row / column address are multiplexed on the same pins.
Row address : RA0~RA12, column address : CA0~CA8
Selects bank to be activated during row address latch time.
Selects bank for read / write during column address latch time.
Latches row addresses on the positive going edge of the CLK with
RAS low. (Enables row access & precharge.)
Latches column address on the positive going edge of the CLK with
CAS low. (Enables column access.)
Enables write operation and row precharge.
Latches data in starting from CAS , WE active.
Makes data output Hi-Z, tSHZ after the clock and masks the output.
Blocks data input when L(U)DQM active.
Data inputs / outputs are multiplexed on the same pins.
Power and ground for the input buffers and the core logic.
Isolated power supply and ground for the output buffers to provide
improved noise immunity.
This pin is recommended to be left No Connection on the device.
Elite Semiconductor Memory Technology Inc.
Publication Date: Aug. 2007
Revision: 1.2
2/44



Part Number M12L2561616A
Description 6 Bit x 4 Banks Synchronous DRAM
Maker Elite Semiconductor - Elite Semiconductor
Total Page 44 Pages
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