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Elite Semiconductor
Elite Semiconductor


M12L128324A

Dynamic RAM


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M12L128324A pdf
ESMT
Revision History
Revision 0.1(May. 13 2005)
-Original
Revision 0.2 (Aug. 08 2005)
-Delete Non-Pb-free of ordering information
Preliminary M12L128324A
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Elite Semiconductor Memory Technology Inc.
Publication Date: Aug. 2005
Revision: 0.2
1/46



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M12L128324A pdf
ESMT
SDRAM
FEATURES
JEDEC standard 3.3V power supply
LVTTL compatible with multiplexed address
Four banks operation
MRS cycle with address key programs
- CAS Latency (1, 2 & 3 )
- Burst Length ( 1, 2, 4, 8 & full page )
- Burst Type ( Sequential & Interleave )
All inputs are sampled at the positive going edge of the
system clock
DQM for masking
Auto & self refresh
64ms refresh period (4K cycle)
Preliminary M12L128324A
1M x 32 Bit x 4 Banks
Synchronous DRAM
ORDERING INFORMATION
Product No. MAX FREQ. PACKAGE COMMENTS
M12L128324A-6TG 166MHz 86L TSOPII Pb-free
M12L128324A-7TG 143MHz 86L TSOPII Pb-free
M12L128324A-6BG 166MHz 90 FBGA
Pb-free
M12L128324A-7BG 143MHz 90 FBGA
Pb-free
GENERAL DESCRIPTION
The M12L128324A is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 32 bits.
Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle.
Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a
variety of high bandwidth, high performance memory system applications.
Elite Semiconductor Memory Technology Inc.
Publication Date: Aug. 2005
Revision: 0.2
2/46



Part Number M12L128324A
Description Dynamic RAM
Maker Elite Semiconductor - Elite Semiconductor
Total Page 46 Pages
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