http://www.www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf



Toshiba Electronic Components Datasheet



M12JZ47

SM12JZ47


No Preview Available !

M12JZ47 pdf
www.DataSheet4U.com
SM12GZ47,SM12JZ47,SM12GZ47A,SM12JZ47A
TOSHIBA BIDIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
SM12GZ47,SM12JZ47,SM12GZ47A,SM12JZ47A
AC POWER CONTROL APPLICATIONS
l Repetitive Peak offState Voltage : VDRM = 400, 600V
l R.M.S OnState Current
: IT (RMS) = 12A
l High Commutating (dv / dt)
l Isolation Voltage
: VIsol = 1500V AC
MAXIMUM RATINGS
CHARACTERISTIC
SYMBOL
Repetitive Peak
OffState Voltage and
Repetitive Peak
Reverse Voltage
SM12GZ47
SM12GZ47A
SM12JZ47
SM12JZ47A
R. M. S. Ontate Current
(Full Sine Waveform TC = 72°C)
VDRM
IT (RMS)
Peak One Cylce Surge OnState
Current (NonRepetitive)
I2t Limit Value
Critical Rate of Rise of On-State
Current
(Note 1)
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Voltage
Peak Gate Current
Junction Temperature
Storage Temperature Range
Isolation Voltage (AC, t = 1min.)
ITSM
I2t
di / dt
PGM
PG (AV)
VFGM
IGM
Tj
Tstg
VIsol
RATING
400
600
12
120 (50Hz)
132 (60Hz)
72
50
5
0.5
10
2
40~125
40~125
1500
UNIT
V
A
A
A2s
A / µs
W
W
V
A
°C
°C
V
Unit: mm
JEDEC
JEITA
TOSHIBA
Weight: 1.7g
1310H1A
Note 1: di / dt test condition
VDRM = 0.5 × Rated
ITM 17A
tgw 10µs
tgr 250ns
igp = IGT × 2.0
1 2001-07-10



No Preview Available !

M12JZ47 pdf
www.DataSheet4U.com
SM12GZ47,SM12JZ47,SM12GZ47A,SM12JZ47A
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
Repetitive Peak OffState Current
I
Gate Trigger Voltage
II
III
IV
I
SM12GZ47
SM12JZ47
II
III
Gate Trigger
Current
IV
I
SM12GZ47A
SM12JZ47A
II
III
IV
Peak OnState Voltage
Gate NonTrigger Voltage
Holding Current
Thermal Resistance
Critical Rate of
Rise of OffState
Voltage
SM12GZ47
SM12JZ47
SM12GZ47A
SM12JZ47A
Critical Rate of
Rise of OffState
Voltage at
Commutation
SM12GZ47
SM12JZ47
SM12GZ47A
SM12JZ47A
SYMBOL
TEST CONDITION
MIN TYP. MAX UNIT
IDRM
VDRM = Rated
― ― 20 µA
T2 (+) , Gate (+) ― ― 1.5
VGT
VD = 12V,
RL = 20
T2 (+) , Gate () ― ― 1.5
V
T2 () , Gate () ― ― 1.5
T2 () , Gate (+) ― ― ―
T2 (+) , Gate (+) ― ― 30
T2 (+) , Gate () ― ― 30
T2 () , Gate () ― ― 30
IGT
VD = 12V,
RL = 20
T2 () , Gate (+) ― ― ―
mA
T2 (+) , Gate (+) ― ― 20
T2 (+) , Gate () ― ― 20
T2 () , Gate () ― ― 20
T2 () , Gate (+) ― ― ―
VTM
VGD
IH
Rth (jc)
ITM = 17A
VD = Rated, Tc = 125°C
VD = 12V, ITM = 1A
Junction to Case, AC
― ― 1.5 V
0.2 ― ― V
― ― 50 mA
― ― 3.0 °C / W
dv / dt
VDRM = Rated, Tj = 125°C
Exponential Rise
300
V / µs
200
(dv / dt) c
VDRM = 400V, Tj = 125°C
(di / dt) c = 6.5A / ms
10 ― ―
V / µs
4 ――
MARKING
*NUMBER
SYMBOL
*1 TOSHIBA PRODUCT MARK
SM12GZ47, SM12GZ47A
*2
TYPE
SM12JZ47, SM12JZ47A
*3 SM12GZ47A, SM12JZ47A
MARK
M12GZ47
M12JZ47
A
Example
*4
8A: January 1998
8B: February 1998
8L: December 1998
2 2001-07-10



Part Number M12JZ47
Description SM12JZ47
Maker Toshiba Semiconductor - Toshiba Semiconductor
Total Page 5 Pages
PDF Download
M12JZ47 pdf
Download PDF File
M12JZ47 pdf
View for Mobile




Featured Datasheets

Part Number Description Manufacturers PDF
M12JZ47 SM12JZ47 M12JZ47
Toshiba Semiconductor
PDF


Part Number Start With

0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z

site map

webmaste! click here

contact us

Buy Components