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IXYS
IXYS


M1102NC580

Fast Recovery Diode



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M1102NC580 pdf
Date:- 26 November, 2002
Data Sheet Issue:- 1
Fast Recovery Diode
Type M1102NC500 to M1102NC600
Old Type No.: SM46-56CXC574
Absolute Maximum Ratings
VRRM
VRSM
VOLTAGE RATINGS
Repetitive peak reverse voltage, (note 1)
Non-repetitive peak reverse voltage, (note 1)
MAXIMUM
LIMITS
5000-6000
5100-6100
UNITS
V
V
IF(AVM)
IF(AVM)
IF(AVM)
IF(RMS)
If(d.c.)
IFSM
IFSM2
I2t
I2t
TS
Tstg
OTHER RATINGS
Maximum average forward current, Tsink=55°C, (note 2)
Maximum average forward current. Tsink=85°C, (note 2)
Maximum average forward. Tsink=85°C, (note 3)
Nominal RMS forward current, Tsink=25°C, (note 2)
D.C. forward current, Tsink=25°C, (note 4)
Peak non-repetitive surge tp=10ms, VRM=0.6VRRM, (note 5)
Peak non-repetitive surge tp=10ms, VRM10V, (note 5)
I2t capacity for fusing tp=10ms, VRM=0.6VRRM, (note 5)
I2t capacity for fusing tp=10ms, VRM10V, (note 5)
Operating temperature range
Storage temperature range
Notes:-
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 125°C Tj initial.
MAXIMUM
LIMITS
1102
756
457
2182
1886
13
14.3
845×103
1.02×106
-40 to +125
-40 to +150
UNITS
A
A
A
A
A
kA
kA
A2s
A2s
°C
°C
Data Sheet. Types M1102NC500 to M1102NC600 Issue 1
Page 1 of 11
November, 2002



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M1102NC580 pdf
WESTCODE An IXYS Company
Characteristics
Fast Recovery Diode Types M1102NC500 to M1102NC600
PARAMETER
VFM Maximum peak forward voltage
VFM Maximum peak forward voltage
VT0 Threshold voltage
rT Slope resistance
VFRM Maximum forward recovery voltage
IRRM Peak reverse current
Qrr Recovered charge
Qra Recovered charge, 50% Chord
Irm Reverse recovery current
trr Reverse recovery time, 50% Chord
RthJK Thermal resistance, junction to heatsink
F Mounting force
Wt Weight
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
19
-
TYP. MAX. TEST CONDITIONS (Note 1)
-
-
-
-
-
-
-
3300
1500
550
5.5
-
-
-
480
2.2
2.57
1.36
IFM=1500A
IFM=2200A
0.557
450 di/dt = 1000A/µs
270 di/dt = 1000A/µs, Tj = 25°C
60 Rated VRRM
-
2000 IFM=1000A, tp=500µs, di/dt=200A/µs,
- Vr=50V, 50% Chord.
-
0.022 Double side cooled
0.044 Single side cooled
26
-
Notes:-
1) Unless otherwise indicated Tj=125°C.
UNITS
V
V
m
V
V
mA
µC
µC
A
µs
K/W
kN
g
Data Sheet. Types M1102NC500 to M1102NC600 Issue 1
Page 2 of 11
November, 2002



Part Number M1102NC580
Description Fast Recovery Diode
Maker IXYS - IXYS
Total Page 11 Pages
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