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M1102

PNP transistor/Schottky-diode module


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M1102 pdf
DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, halfpage
M3D087
PZTM1102
PNP transistor/Schottky-diode
module
Product specification
File under Discrete Semiconductors, SC01
1996 May 09



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M1102 pdf
Philips Semiconductors
PNP transistor/Schottky-diode module
Product specification
PZTM1102
FEATURES
Low output capacitance
Fast switching time
Integrated Schottky protection
diode.
APPLICATIONS
High-speed switching for industrial
applications.
PINNING
PIN DESCRIPTION
1 cathode Schottky
2 base
3 emitter
4 collector, anode Schottky
DESCRIPTION
Combination of a PNP transistor and a Schottky barrier diode in a plastic
SOT223 package. NPN complement: PZTM1101.
handbook, halfpage
4
1
1
Top view
2
3
4
2
MAM237
3
Marking code: TM1102.
Fig.1 Simplified outline (SOT223) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN. MAX. UNIT
PNP transistor
VCBO
VCES
VEBO
IC
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
Schottky barrier diode
VR
IF
IF(AV)
P
continuous reverse voltage
forward current (DC)
average forward current
power dissipation
Tj junction temperature
Combined device
Ptot
Tamb
Tstg
Tj
total power dissipation
operating ambient temperature
storage temperature
junction temperature
open emitter
VBE = 0
open collector
up to Tamb = 25 °C; note 1
reverse current applied
forward current applied
up to Tamb = 25 °C; note 2
− −40 V
− −40 V
− −6 V
− −200 mA
40 V
1A
1A
0.5 W
125 °C
150 °C
1.2 W
55 +150 °C
55 +150 °C
150 °C
Notes
1. An additional copper area of >20 mm2 is required for pin 1, if power dissipation in the Schottky die is >0.5 W.
2. It is not allowed to dissipate the total power of 1.2 W in the Schottky die only.
1996 May 09
2



Part Number M1102
Description PNP transistor/Schottky-diode module
Maker NXP - NXP
Total Page 7 Pages
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