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ETC
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M01N60

N Channel MOSFET



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M01N60 pdf
N Channel MOSFET
1.0A
PIN CONFIGURATION
TO-251
TO-252
1.Gate 2.Drain 3.Source
M01N60
FEATURE
Robust High Voltage Temination.
Avalanche Energy Specified
Source-to Drain Diode Recovery Time
Comparable to a Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge
Circurits
IDSS and VDS(on) Specified at Elevated
Temperature
ABSOLUTE MAXIMUM RATINGS
RATING
SYMBOL VALUE UNIT
Drain to Current - Continuous
- Pulsed
ID 1.0 A
IDM 5.0
Gate-to-Source Voltage – Continue
- Non-repetitive
VGS
VGSM
+/-30
+/-40
V
V
Total Power Dissipation
TO-251/252
PD W
50
Operating and Storage Temperature Range
TJ, TSTG -55 to 150
Single Pulse Drain-to-Source Avalanche Energy – Tj = 25
(VDD =100V, VGS = 10V, IAS = 2A, L = 10mH, RG = 25
Thermal Resistance – Junction to Case
- Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8’’ form 10 seconds
EAS
JA
TL
20 mJ
1.0 /W
62.5
260
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
Page 1



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M01N60 pdf
N Channel MOSFET
1.0A
M01N60
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ta=25
PARAMETERS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current-
Forward
Gate Threshhold Voltage
Drain-Source On-Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-Off Delay Time
SYMBO MIN TYP MAX UNIT
L
V(BR)DSS 600
Vdc
CONDITION
VGS=0, ID=250uA
IDSS
IGSSF
1.0
0.25
100
mA
mA
nA
VDS=600V, VGS=0
VDS=480V, VGS=0, Tj=125
VGSR=20V, VDS=0
VGS(th)
RDS(on)
2.0
Ciss 210
Coss 28
Crss 9
ton 8
toff 18
4.0 V
8 Ohm
VDS=VGS, ID=250uA
VGS=10V, ID=0.6A*
pF
pF VDS=25V, VGS=0, f=1 MHz
pF
nS
nS VDS=300V, ID=1.0A,
Rise Time
tr 21 nS VGS=10V, RG=18
Fall Time
tf 24 nS
Total Gate Charge
Gate-Drain Charge
Qg 8.5 nC
Qgd 8.5 nC VDS=400V, ID=1.0A
Gate-Drain Charge
Qgs 1.8 nC VGS=10V*
Intemal Drain Inductance
Internal Drain Inductance
LD 4.5 nH Measured from the drain lead
0.25’’ From package to center
of die
Ls 7.5 nH Measured from the sorce lead
0.25’’ package to source bond
pad
SOURCE-DRAIN DIODE CHARACTERISTICS
Forward On-Voltage(1)
Forward Tum Time
Reverse Recovery Time
VDS
ton
trr
1.5 V
** nS
350 500 nS
Is=1.0A, VGS=0V
dIS/dt = 100A/
*Pulse Test: Pulse Width 300 S, Duty Cycle 2%
**Negligible, Dominated by circuit inductance
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
TEL: (650) 9389294 FAX: (650) 9389295



Part Number M01N60
Description N Channel MOSFET
Maker ETC - ETC
Total Page 5 Pages
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