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Fairchild Semiconductor Electronic Components Datasheet



L14P1

HERMETIC SILICON PHOTOTRANSISTOR



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L14P1 pdf
HERMETIC SILICON PHOTOTRANSISTOR
PACKAGE DIMENSIONS
0.195 (4.95)
0.178 (4.52)
0.230 (5.84)
0.209 (5.31)
0.030 (0.76)
NOM
0.255 (6.47)
0.225 (5.71)
0.500 (12.7)
MIN
L14P1 L14P2
0.100 (2.54)
0.050 (1.27)
2
0.038 (0.97)
0.046 (1.16)
0.036 (0.92)
13
45°
Ø0.020 (0.51) 3X
NOTES:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ± .010 (.25) on all non-nominal dimensions
unless otherwise specified.
SCHEMATIC
(CONNECTED TO CASE)
COLLECTOR
3
BASE 2
1
EMITTER
DESCRIPTION
The L14P1/L14P2 are silicon phototransistors mounted in a narrow angle, TO-18 package.
FEATURES
• Hermetically sealed package
• Narrow reception angle
• Devices can be used as a photodiode by wiring the collector and base leads.
2001 Fairchild Semiconductor Corporation
DS300309 6/01/01
1 OF 4
www.fairchildsemi.com



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L14P1 pdf
HERMETIC SILICON PHOTOTRANSISTOR
L14P1 L14P2
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Operating Temperature
Storage Temperature
Soldering Temperature (Iron)(3,4,5 and 6)
Soldering Temperature (Flow)(3,4 and 6)
Collector to Emitter Breakdown Voltage
Collector to Base Breakdown Voltage
Emitter to Base Breakdwon Voltage
Power Dissipation (TA = 25°C)(1)
Power Dissipation (TC = 25°C)(2)
Symbol
TOPR
TSTG
TSOL-I
TSOL-F
VCEO
VCBO
VEBO
PD
PD
Rating
-65 to +125
-65 to +150
240 for 5 sec
260 for 10 sec
30
40
5
300
600
Unit
°C
°C
°C
°C
V
V
V
mW
mW
NOTE:
1. Derate power dissipation linearly 3.00 mW/°C above 25°C ambient.
2. Derate power dissipation linearly 6.00 mW/°C above 25°C case.
3. RMA flux is recommended.
4. Methanol or isopropyl alcohols are recommended as cleaning agents.
5. Soldering iron tip 1/16” (1.6mm) minimum from housing.
6. As long as leads are not under any stress or spring tension.
7. Light source is a GaAs LED emitting light at a peak wavelength of 940 nm.
8. Figure 1 and figure 2 use light source of tungsten lamp at 2870°K color temperature. A GaAs source of 3.0 mW/cm2 is approximately
equivalent to a tungsten source, at 2870°K, of 10 mW/cm2.
ELECTRICAL / OPTICAL CHARACTERISTICS (TA =25°C) (All measurements made under pulse conditions)
PARAMETER
Collector-Emitter Breakdown
Emitter-Base Breakdown
Collector-Base Breakdown
Collector-Emitter Leakage
Reception Angle at 1/2 Sensitivity
On-State Collector Current L14P1
On-State Collector Current L14P2
On-State Photodiode Current
Rise Time
Fall Time
Saturation Voltage L14P1
Saturation Voltage L14P2
TEST CONDITIONS
SYMBOL MIN
TYP
MAX
UNITS
IC = 10 mA, Ee = 0
BVCEO
30
—V
IE = 100 µA, Ee = 0
BVEBO
5.0
—V
IC = 100 µA, Ee = 0
BVCBO
40
—V
VCE = 12 V, Ee = 0
ICEO
100 nA
θ ±8 Degrees
Ee = 0.5 mW/cm2, VCE = 5 V(7,8)
IC(ON)
6.5
— mA
Ee = 0.5 mW/cm2, VCE = 5 V(7,8)
IC(ON)
13.0
mA
Ee = 0.3 mW/cm2, VCB = 5 V
ICB(ON)
6.0
µA
IC = 10 mA, VCC = 5 V, RL =100
tr
10 µs
IC = 10 mA, VCC = 5 V, RL =100
IC = 0.8 mA, Ee = 0.6 mW/cm2(7,8)
IC = 1.6 mA, Ee = 0.6 mW/cm2(7,8)
tf
VCE(SAT)
VCE(SAT)
12 µs
0.40 V
0.40 V
www.fairchildsemi.com
2 OF 4
6/01/01 DS300309



Part Number L14P1
Description HERMETIC SILICON PHOTOTRANSISTOR
Maker Fairchild Semiconductor - Fairchild Semiconductor
Total Page 4 Pages
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