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IXYS Corporation
IXYS Corporation


L016

High Power Diode Modules



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L016 pdf
High Power
Diode Modules
MDO 500
IFRMS = 880 A
IFAVM = 560 A
VRRM = 1200-2200 V
VRSM
VDSM
V
1300
1500
1700
1900
2100
2300
VRRM
VDRM
V
1200
1400
1600
1800
2000
2200
Type
MDO 500-12N1
MDO 500-14N1
MDO 500-16N1
MDO 500-18N1
MDO 500-20N1
MDO 500-22N1
32
3
2
Symbol
IFRMS
IFAVM
I
FSM
I2t
TVJ
T
VJM
Tstg
VISOL
Md
Weight
Test Conditions
TVJ = TVJM
TC = 85°C; 180° sine
T
VJ
=
45°C
VR = 0
T =T
VJ VJM
VR = 0
TVJ = 45°C
VR = 0
TVJ = TVJM
V =0
R
t = 10 ms (50 Hz)
t = 8.3 ms (60 Hz)
t = 10 ms (50 Hz)
t = 8.3 ms (60 Hz)
t = 10 ms (50 Hz)
t = 8.3 ms (60 Hz)
t = 10 ms (50 Hz)
t = 8.3 ms (60 Hz)
50/60 Hz, RMS
t = 1 min
IISOL £ 1 mA
t=1s
Mounting torque (M6)
Terminal connection torque (M8)
Typical including screws
Maximum Ratings
880 A
560 A
15000
16000
A
A
13000
14400
A
A
1125000
1062000
A2s
A2s
845000
813000
A2s
A2s
-40...140
140
-40...125
°C
°C
°C
3000
3600
V~
V~
4.5-7/40-62 Nm/lb.in.
11-13/97-115 Nm/lb.in.
650 g
Features
q International standard package
q Direct copper bonded Al O -ceramic
23
with copper base plate
q Planar passivated chips
q Isolation voltage 3600 V~
q UL registered E 72873
Applications
q Supplies for DC power equipment
q DC supply for PWM inverter
q Field supply for DC motors
q Battery DC power supplies
Advantages
q Simple mounting
q Improved temperature and power
cycling
q Reduced protection circuits
Dimensions in mm (1 mm = 0.0394")
Symbol
IRRM
V
F
VT0
rT
RthJC
RthJK
d
S
dA
a
Test Conditions
TVJ = TVJM; VR = VRRM
I
F
=
1200
A;
T
VJ
=
25°C
For power-loss calculations only (TVJ = TVJM)
DC current
DC current
Creeping distance on surface
Creepage distance in air
Maximum allowable acceleration
Characteristic Values
30 mA
1.3 V
0.8 V
0.38 mW
0.072
0.096
K/W
K/W
21.7
9.6
50
mm
mm
m/s2
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions
© 2000 IXYS All rights reserved
1-3



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L016 pdf
MDO 500
14000
ITSM
120A00
10000
8000
50 Hz
80 % VRRM
TVJ = 45°C
TVJ = 140°C
6000
4000
2000
0
0.001
0.01
0.1 s
t
Fig. 1 Surge overload current
I : Crest value, t: duration
FSM
1
1200
Ptot
W
1000
800
600
DC
180° sin
400
120°
60°
30°
200
107
I2t VR = 0V
A2s
TVJ = 45°C
106
1000
9A00
IFAVM
800
700
600
500
DC
180° sin
120°
60°
30°
TVJ = 140°C
400
300
200
100
105
1
t
Fig. 2 I2t versus time (1-10 ms)
ms 10
0
0 25 50 75 100 125 °C 150
TC
Fig. 3 Maximum forward current
at case temperature
RthKA K/W
0.03
0.07
0.12
0.2
0.3
0.4
0.6
Fig. 4 Power dissipation versus
forward current and ambient
temperature
0
0 200 400 600 800 A 0
IFAVM
25 50 75 100 1°2C5 150
TA
3200
W
2800
Ptot
2400
2000
1600
1200
800
400
0
0
RL
Circuit
B2
4xMDO500
300 600 900 1200 A 0
IdAVM
RthKA K/W
0.015
0.03
0.04
0.05
0.07
0.01
0.14
25 50 75 100 1°2C5 150
TA
Fig. 5 Single phase rectifier bridge:
Power dissipation versus direct
output current and ambient
temperature
R = resistive load
L = inductive load
© 2000 IXYS All rights reserved
2-3



Part Number L016
Description High Power Diode Modules
Maker IXYS Corporation - IXYS Corporation
Total Page 3 Pages
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