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ETC
ETC


L-51P3C

Made with NPN silicon phototransistor chips


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L-51P3C pdf
Features
!MECHANICALLY AND SPECTRALLY MATCHED TO
THE L-53 SERIES INFRARED EMITTING LED LAMP.
!WATER CLEAR LENS.
PHOTOTRANSISTOR
L-51P3C
Description
Made with NPN silicon phototransistor chips.
Package Dimensions
Notes:
1. All dimensions are in millimeters (inches).
2. Tolerance is ±0.25(0.01") unless otherwise noted.
3. Lead spacing is measured where the lead emerge package.
4. Specifications are subject to change without notice.
SPEC NO: KDA0531
APPROVED:J.LU
REV NO: V.1
CHECKED:
DATE: SEP/17/2001
DRAWN:X.Q.ZHENG
PAGE: 1 OF 2



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L-51P3C pdf
Absolute Maximum Rating at T)=25°C
Parameter
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage
Power Dissipation at (or below) 25°C Free Air Temperature
Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature(4mm For 5sec)
Maximum Ratings
30V
5V
100mW
-40°C ~ +85°C
-40°C ~ +85°C
260°C
Electrical And Radiant Characteristics at T)=25°C
Symbol
Parameter
Min.
VBR CEO
Collector-to-Emitter Breakdown Voltage
VBR ECO
Emitter-to-Collector Breakdown Voltage
VCE (SAT) Collector-to-Emitter Saturation Voltage
ICEO Collector Dark Current
TR Rise Time (10% to 90%)
TF Fall Time (90% to 10%)
30
5
-
-
-
-
Typ.
-
-
-
-
3
3
Max.
-
-
0.8
100
-
-
Unit
V
V
V
nA
us
us
Test Condiction
I C=100uA
Ee=0mW/cm2
I E=100uA
Ee=0mW/cm2
I C=2mA
Ee=20mW/cm2
VCE=10V
Ee=0mW/cm2
VCE=5V
IC=1mA
RL=1K
I (ON) On State Collector Current
VCE=5V,
0.1 0.5
-
mA
Ee=1mW/cm2,
λ=940nm
SPEC NO: KDA0531
APPROVED:J.LU
REV NO: V.1
CHECKED:
DATE: SEP/17/2001
DRAWN:X.Q.ZHENG
PAGE: 2 OF 2



Part Number L-51P3C
Description Made with NPN silicon phototransistor chips
Maker ETC - ETC
Total Page 2 Pages
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