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Toshiba Electronic Components Datasheet



K170

FET/ Silicon N Channel Junction Type(for Low Noise Audio Amplifier)



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K170 pdf
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK170
2SK170
Low Noise Audio Amplifier Applications
Unit: mm
Recommended for first stages of EQ and M.C. head amplifiers.
High |Yfs|: |Yfs| = 22 mS (typ.) (VDS = 10 V, VGS = 0, IDSS = 3 mA)
High breakdown voltage: VGDS = 40 V
Low noise: En = 0.95 nV/Hz1/2 (typ.)
(VDS = 10 V, ID = 1 mA, f = 1 kHz)
High input impedance: IGSS = 1 nA (max) (VGS = 30 V)
Maximum Ratings (Ta = 25°C)
Characteristics
Gate-drain voltage
Gate current
Drain power dissipation
Junction temperature
Storage temperature range
Symbol
VGDS
IG
PD
Tj
Tstg
Rating
40
10
400
125
55~125
Unit
V
mA
mW
°C
°C
Electrical Characteristics (Ta = 25°C)
JEDEC
TC-92
JEITA
SC-43
TOSHIBA
2-5F1D
Weight: 0.21 g (typ.)
Characteristics
Symbol
Test Condition
Gate cut-off current
Gate-drain breakdown voltage
Drain current
Gate-source cut-off voltage
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Noise figure
IGSS
VGS = −30 V, VDS = 0
V (BR) GDS VDS = 0, IG = −100 µA
IDSS
(Note)
VDS = 10 V, VGS = 0
VGS (OFF)
Yfs
Ciss
Crss
NF (1)
VDS = 10 V, ID = 0.1 µA
VDS = 10 V, VGS = 0, f = 1 kHz
VDS = 10 V, VGS = 0, f = 1 MHz
VDG = 10 V, ID = 0, f = 1 MHz
VDS = 10 V, ID = 1.0 mA, RG = 1 k,
f = 1 kHz
NF (2)
VDS = 10 V, ID = 1.0 mA, RG = 1 k,
f = 1 kHz
Note: IDSS classification GR: 2.6~6.5 mA, BL: 6.0~12 mA, V: 10~20 mA
Min Typ. Max Unit
  −1.0 nA
40   V
2.6
20 mA
0.2  −1.5 V
22 mS
30 pF
6 pF
1.0 10
dB
0.5
2
1 2003-03-25



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K170 pdf
2SK170
2 2003-03-25



Part Number K170
Description FET/ Silicon N Channel Junction Type(for Low Noise Audio Amplifier)
Maker Toshiba - Toshiba
Total Page 5 Pages
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