http://www.www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf



Toshiba Electronic Components Datasheet



K16A60W

TK16A60W


No Preview Available !

K16A60W pdf
MOSFETs Silicon N-Channel MOS (DTMOS)
TK16A60W
1. Applications
• Switching Voltage Regulators
2. Features
(1) Low drain-source on-resistance: RDS(ON) = 0.16 (typ.)
by used to Super Junction Structure : DTMOS
(2) Easy to control Gate switching
(3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.79 mA)
3. Packaging and Internal Circuit
TK16A60W
TO-220SIS
1: Gate
2: Drain
3: Source
1 2012-08-27
Rev.2.0



No Preview Available !

K16A60W pdf
TK16A60W
4. Absolute Maximum Ratings (Note) (Ta = 25unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
Drain current (DC)
Drain current (pulsed)
Power dissipation
Single-pulse avalanche energy
Avalanche current
Reverse drain current (DC)
Reverse drain current (pulsed)
Channel temperature
Storage temperature
Isolation voltage (RMS)
Mounting torque
(Tc = 25)
(t = 1.0 s)
(Note 1)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
VDSS
VGSS
ID
IDP
PD
EAS
IAR
IDR
IDRP
Tch
Tstg
VISO(RMS)
TOR
600
±30
15.8
63.2
40
231
4.0
15.8
63.2
150
-55 to 150
2000
0.6
V
A
W
mJ
A
V
Nm
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
5. Thermal Characteristics
Characteristics
Channel-to-case thermal resistance
Channel-to-ambient thermal resistance
Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: VDD = 90 V, Tch = 25(initial), L = 25.3 mH, RG = 25 , IAR = 4.0 A
Symbol
Rth(ch-c)
Rth(ch-a)
Max Unit
3.13 /W
62.5
Note: This transistor is sensitive to electrostatic discharge and should be handled with care.
2 2012-08-27
Rev.2.0



Part Number K16A60W
Description TK16A60W
Maker Toshiba Semiconductor - Toshiba Semiconductor
Total Page 10 Pages
PDF Download
K16A60W pdf
Download PDF File
K16A60W pdf
View for Mobile




Featured Datasheets

Part Number Description Manufacturers PDF
K16A60W TK16A60W K16A60W
Toshiba Semiconductor
PDF


Part Number Start With

0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z

site map

webmaste! click here

contact us

Buy Components