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  NEC Electronic Components Datasheet  


K1658

2SK1658



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K1658 pdf
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK1658
N-CHANNEL MOS FET
FOR SWITCHING
DESCRIPTION
The 2SK1658 is an N -channel vertical type MOS FET which can be
driven by 2.5 V power supply.
As the MOS FET is low Gate Leakage Current, it is suitable for appliances
including Filter Circuit.
PACKAGE DRAWING (Unit : mm)
2.1 ±0.1
1.25 ±0.1
FEATURES
Directly driven by ICs having a 3 V power supply.
Has low Gate Leakage Current
IGSS = ±5 nA MAX. (VGS = ±3.0 V)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS 30 V
Gate to Source Voltage (VDS = 0 V)
VGSS ±7 V
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note
ID(DC)
ID(pulse)
±100
±200
mA
mA
Total Power Dissipation (TA = 25°C)
PT 150 mW
Channel Temperature
Operating Temperature
Storage Temperature
Tch 150 °C
Topt 55 to +80 °C
Tstg 55 to +150 °C
Note. PW 10 ms, Duty Cycle 50%
G
SD
Marking
EQUIVALENT CIRCUIT
Drain
Gate
Internal
Diode
Gate
Protection
Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device is actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. G15638EJ2V0DS00 (2nd edition)
(Previous No. TC-2361)
Date Published June 2001 NS CP (K)
Printed in Japan
The mark 5 shows major revised points.
©
1991



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K1658 pdf
5 ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS = 30 V, VGS = 0 V
VGS = ±3.0 V, VDS = 0 V
VDS = 3.0 V, ID = 1.0 µA
VDS = 3.0 V, ID = 10 mA
VGS = 2.5 V, ID = 10 mA
VGS = 4.0 V, ID = 10 mA
VDS = 3.0 V
VGS = 0 V
f = 1 MHz
VDD = 3.0 V, ID = 10 mA
VGS = 3.0 V
RG = 10
RL = 300
2SK1658
MIN.
0.9
20
TYP.
1.2
40
25
18
15
10
1.5
50
23
34
43
MAX.
10
±5.0
1.5
45
25
UNIT
µA
nA
V
mS
pF
pF
pF
ns
ns
ns
ns
TEST CIRCUIT SWITCHING TIME
D.U.T.
RG
PG.
VGS
0
τ
τ = 1 µs
Duty Cycle 1%
RL
VDD
VGS
VGS
Wave Form
10%
0
VGS
90%
ID 90%
ID
Wave Form
0 10%
td(on)
ID
tr td(off)
90%
10%
tf
ton toff
2 Data Sheet D15638EJ2V0DS



Part Number K1658
Description 2SK1658
Maker NEC - NEC
Total Page 8 Pages
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