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Hitachi Power Semiconductor Device Electronic Components Datasheet



K1628

2SK1628



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K1628 pdf
2SK1628, 2SK1629
Silicon N-Channel MOS FET
Application
High speed power switching
Features
Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switching regulator and DC-DC converter
Outline
TO-3PL
D
G1
2
3
1. Gate
2. Drain
3. Source
S



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K1628 pdf
2SK1628, 2SK1629
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
2SK1628
2SK1629
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Note 1. PW 10 µs, duty cycle 1%
2. Value at TC = 25°C
Symbol
VDSS
VGSS
ID
I *1
D(pulse)
I DR
Pch*2
Tch
Tstg
Ratings
450
500
±30
30
120
30
200
150
–55 to +150
Unit
V
V
A
A
A
W
°C
°C
2



Part Number K1628
Description 2SK1628
Maker Hitachi Semiconductor - Hitachi Semiconductor
Total Page 6 Pages
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