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Hitachi Power Semiconductor Device Electronic Components Datasheet



K1622

Silicon N-Channel MOS FET



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K1622 pdf
2SK1622(L), 2SK1622(S)
Silicon N-Channel MOS FET
Application
High speed power switching
Features
Low on-resistance
High speed switching
Low drive current
4 V gate drive device
Can be driven from 5 V source
Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Outline
November 1996
LDPAK
4
4
123
D
12
3
G
S
1. Gate
2. Drain
3. Source
4. Drain



No Preview Available !

K1622 pdf
2SK1622(L), 2SK1622(S)
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes 1. PW10 µs, duty cycle 1%
2. Value at TC = 25°C
Symbol
VDSS
VGSS
ID
I *1
D(pulse)
IDR
Pch*2
Tch
Tstg
Ratings
60
±20
25
100
25
50
150
–55 to +150
Unit
V
V
A
A
A
W
°C
°C
2



Part Number K1622
Description Silicon N-Channel MOS FET
Maker Hitachi Semiconductor - Hitachi Semiconductor
Total Page 5 Pages
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