http://www.www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf



Infineon Technologies Electronic Components Datasheet


K15T120

IGBT


No Preview Available !

K15T120 pdf
TrenchStop® Series
IKW15T120
Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft,
fast recovery anti-parallel Emitter Controlled HE diode
C
Approx. 1.0V reduced VCE(sat)
and 0.5V reduced VF compared to BUP313D
Short circuit withstand time – 10s
Designed for :
G
E
- Frequency Converters
- Uninterrupted Power Supply
TrenchStop® and Fieldstop technology for 1200 V applications
offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
PG-TO-247-3
NPT technology offers easy parallel switching capability due to
positive temperature coefficient in VCE(sat)
Low EMI
Low Gate Charge
Very soft, fast recovery anti-parallel Emitter Controlled HE diode
Qualified according to JEDEC1 for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
VCE
IC VCE(sat),Tj=25°C Tj,max Marking Code
IKW15T120 1200V 15A
1.7V
150C K15T120
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
DC collector current
TC = 25C
TC = 100C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE 1200V, Tj 150C
Diode forward current
TC = 25C
TC = 100C
Diode pulsed current, tp limited by Tjmax
Gate-emitter voltage
Short circuit withstand time2)
VGE = 15V, VCC 1200V, Tj 150C
Power dissipation
TC = 25C
Operating junction temperature
Storage temperature
VCE
IC
ICpuls
-
IF
IFpuls
VGE
tSC
Ptot
Tj
Tstg
Package
PG-TO-247-3
Value
1200
30
15
45
45
30
15
45
20
10
110
-40...+150
-55...+150
Unit
V
A
V
s
W
C
1 J-STD-020 and JESD-022
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
IFAG IPC TD VLS
1
Rev. 2.4 12.06.2013
Free Datasheet http://www.Datasheet4U.com



No Preview Available !

K15T120 pdf
TrenchStop® Series
IKW15T120
Soldering temperature, 1.6mm (0.063 in.) from case for 10s -
260
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
Thermal resistance,
junction – ambient
Symbol
RthJC
RthJCD
RthJA
Conditions
Max. Value
1.1
1.5
40
Unit
K/W
Electrical Characteristic, at Tj = 25 C, unless otherwise specified
Parameter
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Diode forward voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
Integrated gate resistor
Symbol
Conditions
V(BR)CES
VCE(sat)
VF
VGE(th)
ICES
VGE=0V, IC=0.5mA
VGE = 15V, IC=15A
Tj=25C
Tj=125C
Tj=150C
VGE=0V, IF=15A
Tj=25C
Tj=125C
Tj=150C
IC=0.6mA,VCE=VGE
VCE=1200V,
VGE=0V
Tj=25C
Tj=150C
IGES
gfs
RGint
VCE=0V,VGE=20V
VCE=20V, IC=15A
min.
1200
-
-
-
-
-
-
5.0
-
-
-
-
Value
typ.
-
1.7
2.0
2.2
1.7
1.7
1.7
5.8
-
-
-
10
none
Unit
max.
-V
2.2
-
-
2.2
-
-
6.5
mA
0.2
2.0
100 nA
-S
Ω
IFAG IPC TD VLS
2
Rev. 2.4 12.06.2013
Free Datasheet http://www.Datasheet4U.com



Part Number K15T120
Description IGBT
Maker Infineon - Infineon
Total Page 15 Pages
PDF Download
K15T120 pdf
Download PDF File
K15T120 pdf
View for Mobile




Featured Datasheets

Part Number Description Manufacturers PDF
K15T120 IGBT K15T120
Infineon
PDF


Part Number Start With

0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z

site map

webmaste! click here

contact us

Buy Components