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Toshiba Electronic Components Datasheet



K15J50D

TK15J50D



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K15J50D pdf
TK15J50D
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS)
TK15J50D
Switching Regulator Applications
Low drain-source ON resistance: RDS (ON) = 0.33 Ω (typ.)
High forward transfer admittance: Yfs= 8.0 S (typ.)
Low leakage current: IDSS = 10 μA (max) (VDS = 500 V)
Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
15.9 MAX.
Unit: mm
Ф3.2 ± 0.2
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Rating
500
±30
15
60
210
360
15
21
150
55 to 150
Unit
V
V
A
W
mJ
A
mJ
°C
°C
2.0 ± 0.3
1.0
0.3
0.25
5.45 ± 0.2
5.45 ± 0.2
123
1: Gate
2: Drain (Heatsink)
3: Source
JEDEC
JEITA
SC-65
TOSHIBA
2-16C1B
Weight : 4.6 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods’’) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
Internal Connection
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch-c)
Rth (ch-a)
0.595
50
°C/W
°C/W
Note 1: Please use devices on conditions that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 2.72 mH, RG = 25 Ω, IAR = 15 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
1
2
3
1 2011-04-25



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K15J50D pdf
Electrical Characteristics (Ta = 25°C)
TK15J50D
Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Total gate charge
Gate-source charge
Gate-drain charge
Symbol
Test Condition
Min Typ. Max Unit
IGSS
IDSS
V (BR) DSS
Vth
RDS (ON)
|Yfs|
Ciss
Crss
Coss
VGS = ±30 V, VDS = 0 V
VDS = 500 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 7.5 A
VDS = 10 V, ID = 7.5 A
VDS = 25 V, VGS = 0 V, f = 1 MHz
⎯ ⎯ ±1
⎯ ⎯ 10
500
2.0 4.0
0.33 0.4
2.0 8.0
1800
9
190
μA
μA
V
V
Ω
S
pF
tr 10 V
VGS
0V
ID = 7.5 A VOUT
40
ton
50 Ω
RL = 27 Ω
80
ns
tf
VDD 200 V
toff Duty 1%, tw = 10 μs
15
110
Qg
Qgs VDD 400 V, VGS = 10 V, ID = 15 A
Qgd
38
24 nC
14
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
IDR = 15 A, VGS = 0 V
IDR = 15 A, VGS = 0 V,
dIDR/dt = 100 A/μs
Marking
Min Typ. Max Unit
⎯ ⎯ 15 A
⎯ ⎯ 60 A
⎯ ⎯ −1.7 V
1200
ns
13 ⎯ μC
TOSHIBA
K15J50D
Part No.
(or abbreviation code)
Lot No.
Note 4
Note 4: A line under a Lot No. identifies the indication of product Labels
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is Directive 2002/95/EC of the European Parliament and
of the Council of 27 January 2003 on the restriction of the use of certain
hazardous substances in electrical and electronic equipment.
2 2011-04-25



Part Number K15J50D
Description TK15J50D
Maker Toshiba Semiconductor - Toshiba Semiconductor
Total Page 6 Pages
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