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Toshiba Electronic Components Datasheet



K15A60U

TK15A60U



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K15A60U pdf
TK15A60U
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS II)
TK15A60U
Switching Regulator Applications
Unit: mm
Low drain-source ON-resistance: RDS (ON) = 0.24 (typ.)
High forward transfer admittance: Yfs= 8.5 S (typ.)
Low leakage current: IDSS = 100 μA (max) (VDS = 600 V)
Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS 600 V
Gate-source voltage
VGSS ±30 V
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
ID
IDP
PD
EAS
15
A
30
40 W
81 mJ
1: Gate
2: Drain
3: Source
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
IAR
EAR
Tch
Tstg
15
4
150
-55 to 150
A
mJ
°C
°C
JEDEC
JEITA
TOSHIBA
SC-67
2-10U1B
Note: Using continuously under heavy loads (e.g. the application of
Weight: 1.7 g (typ.)
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please
design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/’’Derating Concept and Methods’’) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch-c)
Rth (ch-a)
3.125
62.5
°C/W
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 0.63 mH, RG = 25 , IAR = 15 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1
2
3
Start of commercial production
2008-02
1 2013-11-01
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K15A60U pdf
Electrical Characteristics (Ta = 25°C)
TK15A60U
Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Turn-ON time
Switching time
Fall time
Turn-OFF time
Total gate charge
Gate-source charge
Gate-drain charge
Symbol
Test Condition
Min Typ. Max Unit
IGSS
IDSS
V (BR) DSS
Vth
RDS (ON)
|Yfs|
Ciss
Crss
Coss
VGS = ±30 V, VDS = 0 V
VDS = 600 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 7.5 A
VDS = 10 V, ID = 7.5 A
VDS = 10 V, VGS = 0 V, f = 1 MHz
⎯ ⎯ ±1
⎯ ⎯ 100
600
3.0 5.0
0.24 0.3
3.0 8.5
950
47
2300
μA
μA
V
V
Ω
S
pF
tr 10 V
VGS
ton 0 V
ID = 7.5 A VOUT
37
80
50 Ω
RL = 40 Ω
ns
tf 8
VDD 300 V
toff Duty 1%, tw = 10 μs
Qg
Qgs VDD 400 V, VGS = 10 V, ID = 15 A
Qgd
105
17
10 nC
7
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
IDR = 15 A, VGS = 0 V
IDR = 15 A, VGS = 0 V,
dIDR/dt = 100 A/μs
Marking
Min Typ. Max Unit
⎯ ⎯ 15 A
⎯ ⎯ 30 A
⎯ ⎯ -1.7 V
530
ns
9.0 ⎯ μC
K15A60U
Note 4: A dot marking for identifying the indication of product
Part No. (or abbreviation code)
Lot No.
Labels.
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Note 4
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2011/65/EU of the European Parliament
and of the Council of 8 June 2011 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
2 2013-11-01
Free Datasheet http://www.0PDF.com



Part Number K15A60U
Description TK15A60U
Maker Toshiba - Toshiba
Total Page 6 Pages
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