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Toshiba Electronic Components Datasheet



K15A50D

TK15A50D



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TK15A50D
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS)
TK15A50D
Switching Regulator Applications
Low drain-source ON-resistance: RDS (ON) = 0.24 Ω (typ.)
High forward transfer admittance: |Yfs| = 7.0 S (typ.)
Low leakage current: IDSS = 10 μA (VDS = 500 V)
Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
Drain current
DC (Note 1)
Pulse (t = 1 ms)
(Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
500
±30
15
60
50
542
15
5.0
150
55 to 150
V
V
A
W
mJ
A
mJ
°C
°C
1: Gate
2: Drain
3: Source
JEDEC
JEITA
SC-67
TOSHIBA
2-10U1B
Weight : 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch-c)
Rth (ch-a)
2.5 °C/W
62.5 °C/W
Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 4.1 mH, RG = 25 Ω, IAR = 15 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1
2
3
1 2008-09-16
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K15A50D pdf
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Electrical Characteristics (Ta = 25°C)
TK15A50D
Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Total gate charge
Gate-source charge
Gate-drain charge
Symbol
Test Condition
Min Typ. Max Unit
IGSS
VGS = ±30 V, VDS = 0 V
⎯ ⎯ ±1
IDSS
VDS = 500 V, VGS = 0 V
⎯ ⎯ 10
V (BR) DSS ID = 10 mA, VGS = 0 V
500
Vth VDS = 10 V, ID = 1 mA
2.0 4.0
RDS (ON) VGS = 10 V, ID = 7.5 A
0.24 0.3
Yfs
VDS = 10 V, ID = 7.5 A
2.0 7.0
Ciss 2300
Crss
VDS = 25 V, VGS = 0 V, f = 1 MHz
10
Coss
250
tr
10 V
VGS
ID = 7.5 A VOUT
50
0V
ton
50 Ω
RL =
26 Ω
100
tf 25
VDD 200 V
toff Duty 1%, tw = 10 μs
140
μA
μA
V
V
Ω
S
pF
ns
Qg
Qgs VDD 400 V, VGS = 10 V, ID = 15 A
Qgd
40
25 nC
15
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
IDR = 15 A, VGS = 0 V
IDR = 15 A, VGS = 0 V,
dIDR/dt = 100 A/μs
Min Typ. Max Unit
⎯ ⎯ 15 A
⎯ ⎯ 60 A
⎯ ⎯ −1.7 V
1600
ns
20 ⎯ μC
Marking
K15A50D
Part No. (or abbreviation code)
Lot No.
A line indicates
Lead(Pb)-Free Finish
2 2008-09-16
Datasheet pdf - http://www.DataSheet4U.net/



Part Number K15A50D
Description TK15A50D
Maker Toshiba Semiconductor - Toshiba Semiconductor
Total Page 6 Pages
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