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Toshiba Electronic Components Datasheet



K15A20D

TK15A20D



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K15A20D pdf
MOSFETs Silicon N-Channel MOS (π-MOS)
TK15A20D
1. Applications
• Switching Voltage Regulators
2. Features
(1) Low drain-source on-resistance: RDS(ON) = 0.12 (typ.)
(2) Low leakage current: IDSS = 10 µA (max) (VDS = 200 V)
(3) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)
3. Packaging and Internal Circuit
TK15A20D
TO-220SIS
1: Gate (G)
2: Drain (D)
3: Source (S)
1 2011-10-10
Rev.2.0



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K15A20D pdf
TK15A20D
4. Absolute Maximum Ratings (Note) (Ta = 25unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
Drain current (DC)
Drain current (pulsed)
Power dissipation
Single-pulse avalanche energy
Avalanche current
Reverse drain current (DC)
Reverse drain current (pulsed)
Channel temperature
Storage temperature
Isolation voltage (RMS)
Mounting torque
(Tc = 25)
(Note 1)
(Note 1)
(Note 2)
(Note 3)
(Note 1)
(Note 1)
(t = 1.0s)
VDSS
VGSS
ID
IDP
PD
EAS
IAR
IDR
IDRP
Tch
Tstg
VISO(RMS)
TOR
200
±20
15
60
35
90
15
15
60
150
-55 to 150
2000
0.6
V
A
W
mJ
A
V
Nm
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
5. Thermal Characteristics
Characteristics
Channel-to-case thermal resistance
Channel-to-ambient thermal resistance
Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: VDD = 50 V, Tch = 25(initial), L = 0.63 mH, RG = 25 , IAR = 15 A
Note 3: Repetitive rating; pulse width limited by maximum channel temperature
Symbol
Rth(ch-c)
Rth(ch-a)
Max Unit
3.57 /W
62.5
Note: This transistor is sensitive to electrostatic discharge and should be handled with care.
2 2011-10-10
Rev.2.0



Part Number K15A20D
Description TK15A20D
Maker Toshiba Semiconductor - Toshiba Semiconductor
Total Page 9 Pages
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