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  NEC Electronic Components Datasheet  


K1590

MOS FIELD EFFECT TRANSISTOR



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K1590 pdf
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK1590
N-CHANNEL MOSFET
FOR SWITCHING
DESCRIPTION
The 2SK1590, N-channel vertical type MOSFET, is a switching
device which can be driven directly by the output of ICs having a
5 V power source.
The MOSFET has excellent switching characteristics and is
suitable for use as a high-speed switching device in digital
circuits.
FEATURES
• Directly driven by ICs having a 5 V power source.
• Not necessary to consider driving current because of its high
input impedance.
• Possible to reduce the number of parts by omitting the bias
resistor.
ORDERING INFORMATION
PART NUMBER
2SK1590
Marking: G16
PACKAGE
SC-59 (Mini Mold)
PACKAGE DRAWING (Unit: mm)
2.8 ±0.2
1.5
0.65
+0.1
–0.15
2
3
1
Marking
1. Source
2. Gate
3. Drain
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC)
Drain Current (pulse) Note
ID(DC)
ID(pulse)
Total Power Dissipation
PT
Channel Temperature
Tch
Storage Temperature
Tstg
60
±20
±200
±400
200
150
55 to +150
V
V
mA
mA
mW
°C
°C
Note PW 10 ms, Duty Cycle 50%
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D13628EJ4V0DS00 (4th edition)
Date Published May 2006 NS CP(K)
Printed in Japan
2006
Downloaded from Elcodis.com electronic components distributor



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K1590 pdf
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current
IDSS VDS = 60 V, VGS = 0 V
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance Note
Drain to Source On-state Resistance Note
IGSS
VGS(off)
| yfs |
RDS(on)1
VGS = ±20 V, VDS = 0 V
VDS = 5.0 V, ID = 1.0 μA
VDS = 5.0 V, ID = 10 mA
VGS = 4.0 V, ID = 10 mA
RDS(on)2 VGS = 10 V, ID = 10 mA
Input Capacitance
Ciss VDS = 5.0 V
Output Capacitance
Coss
VGS = 0 V
Reverse Transfer Capacitance
Crss f = 1 MHz
Turn-on Delay Time
td(on)
VDD = 5.0 V, ID = 10 mA
Rise Time
tr VGS = 5.0 V
Turn-off Delay Time
td(off)
RG = 10 Ω
Fall Time
tf
Note Pulsed
TEST CIRCUIT SWITCHING TIME
D.U.T.
RG
PG.
VGS
0
τ
τ = 1 μs
Duty Cycle 1%
RL
VDD
VGS
VGS
Wave Form
0 10%
VGS 90%
ID 90%
ID
Wave Form
0 10%
td(on)
ID
tr td(off)
90%
10%
tf
ton toff
2SK1590
MIN.
0.8
20
TYP.
1.2
65
3.2
2.4
26
20
4.0
50
140
200
190
MAX.
1.0
±1.0
1.8
6.0
3.0
UNIT
μA
μA
V
mS
Ω
Ω
pF
pF
pF
ns
ns
ns
ns
2
Downloaded from Elcodis.com electronic components distributor
Data Sheet D13628EJ4V0DS



Part Number K1590
Description MOS FIELD EFFECT TRANSISTOR
Maker NEC - NEC
Total Page 5 Pages
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