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Toshiba Electronic Components Datasheet



K1529

2SK1529



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K1529 pdf
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK1529
2SK1529
High Power Amplifier Application
l High breakdown voltage
l High forward transfer admittance
l Complementary to 2SJ200
: VDSS = 180V
: |Yfs| = 4.0 S (typ.)
Maximum Ratings (Ta = 25°C)
Characteristics
Drainsource voltage
Gatesource voltage
Drain current
(Note 1)
Drain power dissipation (Tc = 25°C)
Channel temperature
Storage temperature range
Symbol
VDSS
VGSS
ID
PD
Tc
Tstg
Rating
180
±20
10
120
150
55~150
Unit
V
V
A
W
°C
°C
Marking
K1529
Type Lot Number
Month (starting from alphabet A)
Year (last number of
the christian era)
Unit: mm
1. GATE
2. DRAIN (HEAT SINK)
3. SOURCE
JEDEC
JEITA
TOSHIBA
2-16C1B
Weight: 4.6 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Drain cutoff current
Gate leakage current
Drainsource breakdown voltage
Drainsource saturation voltage
Gatesource cutoff voltage (Note 2)
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
IDSS
IGSS
V (BR) DSS
VDS (ON)
VGS (OFF)
|Yfs|
Ciss
Coss
Crss
VDS = 180 V, VGS = 0
VDS = 0, VGS = ±20 V
ID = 10 mA, VGS = 0
ID = 6 A, VGS = 10 V
VDS = 10 V, ID = 0.1 A
VDS = 10 V, ID = 3 A
VDS = 30 V, VGS = 0, f = 1 MHz
VDS = 30 V, VGS = 0, f = 1 MHz
VDD 30 V, VGS = 0, f = 1 MHz
— — 1.0 mA
— — ±0.5 µA
180 —
V
— 2.5 5.0 V
0.8 — 2.8 V
— 4.0 —
S
— 700 —
— 150 —
pF
— 90 —
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VGS (OFF) Classification
0: 0.8~1.6 Y: 1.4~2.8
This transistor is an electrostatic sensitive device.
Please handle with caution.
1 2002-09-02



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K1529 pdf
2SK1529
2 2002-09-02



Part Number K1529
Description 2SK1529
Maker Toshiba Semiconductor - Toshiba Semiconductor
Total Page 3 Pages
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