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Hitachi Power Semiconductor Device Electronic Components Datasheet



K1518

2SK1518



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K1518 pdf
2SK1517, 2SK1518
Silicon N-Channel MOS FET
Application
High speed power switching
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Features
Low on-resistance
High speed switching
Low drive current
Built-in fast recovery diode (trr = 120 ns)
Suitable for motor control, switching regulator, DC-DC converter
Outline
TO-3P
D
G1
2
3
1. Gate
2. Drain
(Flange)
S
3. Source



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K1518 pdf
2SK1517, 2SK1518
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
2SK1517
2SK1518
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
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Notes: 1. PW 10 µs, duty cycle 1%
2. Value at TC = 25°C
Symbol
VDSS
VGSS
ID
I *1
D(pulse)
I DR
Pch*2
Tch
Tstg
Ratings
450
500
±30
20
80
20
120
150
–55 to +150
Unit
V
V
A
A
A
W
°C
°C
2



Part Number K1518
Description 2SK1518
Maker Hitachi Semiconductor - Hitachi Semiconductor
Total Page 9 Pages
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K1518 pdf
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