http://www.www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf



Toshiba Electronic Components Datasheet



K1489

2SK1489


No Preview Available !

K1489 pdf
2SK1489
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSII.5)
2SK1489
Chopper Regulator Applications
z Low drainsource ON resistance
: RDS (ON) = 0.8 (typ.)
z High forward transfer admittance
: |Yfs| = 6.0 S (typ.)
z Low leakage current
: IDSS = 300 μA (max) (VDS = 800 V)
z Enhancement mode
: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
Draingate voltage (RGS = 20 k)
Gatesource voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
Tch
Tstg
1000
1000
±30
12
36
200
150
55 to 150
V
V
V
A
W
°C
°C
JEDEC
JEITA
TOSHIBA
2-21F1B
Weight: 9.75 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (chc)
Rth (cha)
0.625
35.7
°C / W
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
This transistor is an electrostatic-sensitive device.
Please handle with caution.
1 2009-09-29



No Preview Available !

K1489 pdf
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Gate leakage current
Drain cutoff current
Drainsource breakdown voltage
Gate threshold voltage
Drainsource ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
IGSS
IDSS
V (BR) DSS
Vth
RDS (ON)
|Yfs|
Ciss
Crss
Coss
VGS = ±25 V, VDS = 0 V
VDS = 800 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 6 A
VDS = 20 V, ID = 6 A
VDS = 25 V, VGS = 0 V, f = 1 MHz
Rise time
tr
Switching time
Turnon time
Fall time
ton
tf
Turnoff time
Total gate charge (Gate–source
plus gate–drain)
Gatesource charge
Gatedrain (“miller”) charge
toff
Qg
Qgs VDD 400 V, VGS = 10 V, ID = 12 A
Qgd
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Symbol
IDR
IDRP
VDSF
Test Condition
IDR = 12 A, VGS = 0 V
Marking
2SK1489
Min Typ. Max
1000
1.5
4.0
0.8
6.0
2000
220
360
±100
300
3.5
1.0
Unit
nA
μA
V
V
S
pF
— 100 —
— 140 —
— 150 —
ns
— 500 —
— 110 —
— 50 —
— 60 —
nC
Min Typ. Max Unit
— — 12 A
— — 36 A
— — 1.6 V
TOSHIBA
2SK1489
JAPAN
Note 2: A line under a Lot No. identifies the indication of product
Part No. (or abbreviation code)
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Lot No.
Note 2
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
2 2009-09-29



Part Number K1489
Description 2SK1489
Maker Toshiba Semiconductor - Toshiba Semiconductor
Total Page 6 Pages
PDF Download
K1489 pdf
Download PDF File
K1489 pdf
View for Mobile




Featured Datasheets

Part Number Description Manufacturers PDF
K140 Silicon bilateral voltage triggered switch. Breakover voltage 130V (min) to 146V (max) K140
Ceramate
PDF
K1400A 5V Crystal Clock Oscillators K1400A
Champion
PDF
K1400E70 silicon bilateral voltage triggered switch K1400E70
Teccor
PDF
K1400G silicon bilateral voltage triggered switch K1400G
Teccor
PDF
K1400S silicon bilateral voltage triggered switch K1400S
Teccor
PDF
K1401A 2SK1401A K1401A
Hitachi Semiconductor
PDF


Part Number Start With

0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z

site map

webmaste! click here

contact us

Buy Components