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Hitachi Power Semiconductor Device Electronic Components Datasheet



K1336

Silicon N-Channel MOS FET



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K1336 pdf
2SK1336
Silicon N-Channel MOS FET
Application
High speed power switching
Features
Low on-resistance
High speed switching
Low drive current
4 V gate drive device
Can be driven from 5 V source
Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Outline
TO-92
D 321
1. Source
G 2. Drain
3. Gate
S



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K1336 pdf
2SK1336
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW 10 µs, duty cycle 1%
Symbol
VDSS
VGSS
ID
I *1
D(pulse)
I DR
Pch
Tch
Tstg
Ratings
60
±20
0.3
1.2
0.3
400
150
–55 to +150
Unit
V
V
A
A
A
mW
°C
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown
voltage
V(BR)DSS 60
Gate to source breakdown
voltage
V(BR)GSS ±20
Gate to source leak current
I GSS
Zero gate voltage drain current IDSS
Gate to source cutoff voltage VGS(off)
Static drain to source on state RDS(on)
resistance
1.0
Forward transfer admittance |yfs|
0.22
Input capacitance
Ciss —
Output capacitance
Coss —
Reverse transfer capacitance Crss —
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward
voltage
t d(on)
tr
t d(off)
tf
VDF
Body to drain diode reverse
recovery time
t rr
Note: 1. Pulse test
Typ
1.3
1.8
0.35
33
17
5
2
4
18
16
0.9
45
Max
±10
50
2.0
1.7
2.5
Unit
V
V
µA
µA
V
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = 50 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 0.2 A, VGS = 10 V *1
ID = 0.2 A, VGS = 4 V *1
ID = 0.2 A, VDS = 10 V *1
VDS = 10 V, VGS = 0,
f = 1 MHz
ID = 0.2 A, VGS = 10 V,
RL = 150
IF = 0.3 A, VGS = 0
IF = 0.3 A, VGS = 0,
diF/dt = 50 A/µs
2



Part Number K1336
Description Silicon N-Channel MOS FET
Maker Hitachi Semiconductor - Hitachi Semiconductor
Total Page 8 Pages
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