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Hitachi Power Semiconductor Device Electronic Components Datasheet



K1315

2SK1316


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K1315 pdf
2SK1315(L)(S), 2SK1316(L)(S)
Silicon N-Channel MOS FET
Application
High speed power switching
Features
Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switching regulator, DC-DC converter and motor driver
Outline
LDPAK
4
4
123
D
12
3
G
S
1. Gate
2. Drain
3. Source
4. Drain



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K1315 pdf
2SK1315(L)(S), 2SK1316(L)(S)
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
2SK1315
2SK1316
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW 10 µs, duty cycle 1%
2. Value at TC = 25°C
Symbol
VDSS
VGSS
ID
I *1
D(pulse)
I DR
Pch*2
Tch
Tstg
Ratings
450
500
±30
8
32
8
60
150
–55 to +150
Unit
V
V
A
A
A
W
°C
°C
2



Part Number K1315
Description 2SK1316
Maker Hitachi Semiconductor - Hitachi Semiconductor
Total Page 6 Pages
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