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Hitachi Power Semiconductor Device Electronic Components Datasheet



K1306

2SK1306



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K1306 pdf
2SK1306
Silicon N-Channel MOS FET
Application
High speed power switching
Features
Low on-resistance
High speed switching
Low drive current
4 V gate drive device
Can be driven from 5 V source
Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Outline
TO-220FM
D 12 3
1. Gate
G 2. Drain
3. Source
S



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K1306 pdf
2SK1306
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW 10 µs, duty cycle 1%
2. Value at TC = 25°C
Symbol
VDSS
VGSS
ID
I *1
D(pulse)
I DR
Pch*2
Tch
Tstg
Ratings
100
±20
15
60
15
30
150
–55 to +150
Unit
V
V
A
A
A
W
°C
°C
2



Part Number K1306
Description 2SK1306
Maker Hitachi Semiconductor - Hitachi Semiconductor
Total Page 6 Pages
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