http://www.www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf



Toshiba Electronic Components Datasheet



K12A65D

TK12A65D



No Preview Available !

K12A65D pdf
MOSFETs Silicon N-Channel MOS (π-MOS)
TK12A65D
1. Applications
• Switching Voltage Regulators
2. Features
(1) Low drain-source on-resistance: RDS(ON) = 0.46 (typ.)
(2) High forward transfer admittance: |Yfs| = 6.0 S (typ.)
(3) Low leakage current: IDSS = 10 µA (max) (VDS = 650 V)
(4) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
3. Packaging and Internal Circuit
TK12A65D
1: Gate (G)
2: Drain (D)
3: Source (S)
TO-220SIS
4. Absolute Maximum Ratings (Note) (Ta = 25unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS 650 V
Gate-source voltage
VGSS
±30
Drain current (DC)
(Note 1)
ID
12 A
Drain current (pulsed)
(Note 1)
IDP
48
Power dissipation
(Tc = 25)
PD 50 W
Single-pulse avalanche energy
(Note 2)
EAS
611 mJ
Avalanche current
IAR 12 A
Repetitive avalanche energy
(Note 3)
EAR
5.0 mJ
Channel temperature
Tch 150
Storage temperature
Tstg -55 to 150
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Start of commercial production
2010-09
1 2013-12-25
Rev.2.0



No Preview Available !

K12A65D pdf
5. Thermal Characteristics
Characteristics
Channel-to-case thermal resistance
Channel-to-ambient thermal resistance
Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: VDD = 90 V, Tch = 25(initial), L = 7.5 mH, RG = 25 , IAR = 12 A
Note 3: Repetitive rating; pulse width limited by maximum channel temperature
TK12A65D
Symbol
Rth(ch-c)
Rth(ch-a)
Max Unit
2.5 /W
62.5
Note: This transistor is sensitive to electrostatic discharge and should be handled with care.
2 2013-12-25
Rev.2.0



Part Number K12A65D
Description TK12A65D
Maker Toshiba - Toshiba
Total Page 9 Pages
PDF Download
K12A65D pdf
Download PDF File
K12A65D pdf
View for Mobile




Featured Datasheets

Part Number Description Manufacturers PDF
K12A60D TK12A60D K12A60D
Toshiba Semiconductor
PDF
K12A60U TK12A60U K12A60U
Toshiba Semiconductor
PDF
K12A65D TK12A65D K12A65D
Toshiba
PDF


Part Number Start With

0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z

site map

webmaste! click here

contact us

Buy Components