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Toshiba Electronic Components Datasheet



K12A50D

TK12A50D



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K12A50D pdf
TK12A50D
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS)
TK12A50D
Switching Regulator Applications
Low drain-source ON-resistance: RDS (ON) = 0.45 Ω (typ.)
High forward transfer admittance: |Yfs| = 6.0 S (typ.)
Low leakage current: IDSS = 10 μA (VDS = 500 V)
Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
Drain current
DC (Note 1)
Pulse (t = 1 ms)
(Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
500
±30
12
48
45
364
12
4.5
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150
-55 to 150
V
V
A
W
mJ
A
mJ
°C
°C
1: Gate
2: Drain
3: Source
JEDEC
JEITA
SC-67
TOSHIBA
2-10U1B
Weight: 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch-c)
Rth (ch-a)
2.78 °C/W
62.5 °C/W
Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: VDD = 90 V, Tch = 25°C(initial), L = 4.3 mH, RG = 25 Ω, IAR = 12 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1
2
3
1 2008-09-10
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K12A50D pdf
Electrical Characteristics (Ta = 25°C)
TK12A50D
Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Total gate charge
Gate-source charge
Gate-drain charge
Symbol
Test Condition
Min
IGSS
IDSS
V (BR) DSS
Vth
RDS (ON)
Yfs
Ciss
Crss
Coss
tr
ton
VGS = ±30 V, VDS = 0 V
VDS = 500 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
500
VDS = 10 V, ID = 1 mA
2.0
VGS = 10 V, ID = 6 A
VDS = 10 V, ID = 6 A
1.5
VDS = 25 V, VGS = 0 V, f = 1 MHz
10 V
VGS
0V
ID = 6 A VOUT
50 Ω
RL = 33 Ω
tf
VDD 200 V
toff Duty 1%, tw = 10 μs
Qg
Qgs VDD 400 V, VGS = 10 V, ID = 12 A
Qgd
Typ. Max
0.45
6.0
1350
6
135
±1
10
4.0
0.52
22
55
15
100
25
16
9
Unit
μA
μA
V
V
Ω
S
pF
ns
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
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Characteristics
Symbol
Test Condition
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
IDR
IDRP
VDSF
trr
Qrr
IDR = 12 A, VGS = 0 V
IDR = 12 A, VGS = 0 V,
dIDR/dt = 100 A/μs
Min Typ. Max Unit
⎯ ⎯ 12 A
⎯ ⎯ 48 A
⎯ ⎯ −1.7 V
1300
ns
12 ⎯ μC
Marking
K12A50D
Part No. (or abbreviation code)
Lot No.
A line indicates
Lead(Pb)-Fee Finish.
2 2008-09-10
datasheet pdf - http://www.DataSheet4U.net/



Part Number K12A50D
Description TK12A50D
Maker Toshiba Semiconductor - Toshiba Semiconductor
Total Page 6 Pages
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