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Hitachi Power Semiconductor Device Electronic Components Datasheet



K1158

2SK1158



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K1158 pdf
2SK1157, 2SK1158
Silicon N-Channel MOS FET
Application
High speed power switching
Features
Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switching regulator, DC-DC converter and motor driver
Outline
TO-220AB
D 123
1. Gate
G 2. Drain
(Flange)
3. Source
S



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K1158 pdf
2SK1157, 2SK1158
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
2SK1157
2SK1158
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Note: 1. PW 10 µs, duty cycle 1%
2. Value at TC = 25°C
Symbol
VDSS
VGSS
ID
I *1
D(pulse)
I DR
Pch*2
Tch
Tstg
Ratings
450
500
±30
7
28
7
60
150
–55 to +150
Unit
V
V
A
A
A
W
°C
°C
2



Part Number K1158
Description 2SK1158
Maker Hitachi Semiconductor - Hitachi Semiconductor
Total Page 9 Pages
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K1158 pdf
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