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Sanyo Electric Components Datasheet


K1065

2SK1065



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K1065 pdf
Ordering number:ENN2746A
N-Channel Junction Silicon FET
2SK1065
High-Frequency
General-Purpose Amplifier Applications
Features
· Ultrasmall package facilitates miniaturization in end
products.
· Small Crss (Crss=0.04pF typ).
Package Dimensions
unit:mm
2057A
[2SK1065]
0.3
3
0.15
0 to 0.1
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Gate-to-Drain Voltage
Gate Current
Drain Current
Allowable Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VGDO
IG
ID
PD
Tj
Tstg
12
0.65 0.65
2.0
0.3 0.6
0.9
1 : Gate
2 : Drain
3 : Source
SANYO : MCP
Conditions
Ratings
–20
10
20
150
150
–55 to +150
Unit
V
mA
mA
mW
˚C
˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Gate-to-Drain Breakdown Voltage
V(BR)GDO IG=–10µA
Gate-to-Source Leakage Current
IGSS VGS=–0.5V, VDS=0
Zero-Gate Voltage Drain Current
IDSS VDS=5V, VGS=0
Cutoff Voltage
VGS(off) VDS=5V, ID=10µA
Forward Transfer Admittance
| yfs |1
| yfs |2
VDS=5V, VGS=0, f=1kHz
VDS=5V, VGS=0, f=100MHz
* : The 2SK1065 is classified by IDSS as follows (unit : mA) :
IDSS rank
3
4
5
IDSS
1.2 to 3.0 2.5 to 6.0 5.0 to 12.0
(Note) Marking : T
• For CP package version, use the 2SK242.
Ratings
min typ max
Unit
–20 V
–10 nA
1.2* 12.0* mA
–0.4 –1.3 –2.5 V
2.4 6.0
mS
2.4 6.0
mS
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
83100TS (KOTO)/51099TH (KT)/4298TA, TS No.2746–1/4



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K1065 pdf
Continued from preceding page.
Parameter
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Power Gain
Noise Figure
2SK1065
Symbol
Ciss
Crss
Coss
PG
NF
Conditions
VDS=5V, VGS=0, f=1MHz
VDS=5V, VGS=0, f=1MHz
VDS=5V, VGS=0, f=1MHz
VDS=5V, VGS=0, f=100MHz,
See specified Test Circuit
See specified Test Circuit
PG and NF Test Circuit
input L1 to 30pF
to 30pF
50to 30pF
1000pF
L2 output
50
to 30pF
1000pF
VG VD
L1 : 1mm φ plated wire, 10mm φ 4T 18mm pitch,
tapped at 1T from gate side
L2 : 1mm φ plated wire, 10mm φ 6T 10mm pitch,
tapped at 1T from gate side
Ratings
4.0
0.04
4.0
24
3.5
0.15
Unit
pF
pF
pF
dB
6.0 dB
ID -- VGS
VDS=5V
3
2
1
ID -- VDS
VGS=0
--0.1V
--0.2V
--0.3V
--0.4V
0
--0.8
--0.7
--0.6
--0.5 --0.4
--0.3 --0.2
--0.1
0
1
2
3
4
5
6
7
8
Gate-to-Source Voltage, VGS – V
Drain-to-Source Voltage, VDS – V
ITR00943
ID -- VGS
ID -- VDS
VDS=5V
7
VGS=0
6
--0.2V
5
4 --0.4V
3 --0.6V
2
--0.8V
1
0
--1.6
--1.4
--1.2
--1.0
--0.8
--0.6
--0.4
--0.2
0
1
2
3
4
5
6
7
8
Gate-to-Source Voltage, VGS – V
Drain-to-Source Voltage, VDS – V
ITR00944
No.2746–2/4



Part Number K1065
Description 2SK1065
Maker Sanyo - Sanyo
Total Page 4 Pages
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