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Renesas Electronics Components Datasheet


K1058

2SK1058



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K1058 pdf
2SK1056, 2SK1057, 2SK1058
Silicon N Channel MOS FET
Application
Low frequency power amplifier
Complementary pair with 2SJ160, 2SJ161 and 2SJ162
Features
Good frequency characteristic
High speed switching
Wide area of safe operation
Enhancement-mode
Good complementary characteristics
Equipped with gate protection diodes
Suitable for audio power amplifier
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
D
G
1
2
3
S
REJ03G0906-0200
(Previous: ADE-208-1244)
Rev.2.00
Sep 07, 2005
1. Gate
2. Source
(Flange)
3. Drain
Rev.2.00 Sep 07, 2005 page 1 of 5



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K1058 pdf
2SK1056, 2SK1057, 2SK1058
Absolute Maximum Ratings
Item
Drain to source voltage
2SK1056
2SK1057
2SK1058
Gate to source voltage
Drain current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Note: 1. Value at TC = 25°C
Electrical Characteristics
Symbol
VDSX
VGSS
ID
IDR
Pch*1
Tch
Tstg
Item
Drain to source
2SK1056
breakdown voltage
2SK1057
2SK1058
Gate to source breakdown voltage
Gate to source cutoff voltage
Drain to source saturation voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time
Turn-off time
Note: 2. Pulse test
Symbol
V(BR)DSX
V(BR)GSS
VGS(off)
VDS(sat)
|yfs|
Ciss
Coss
Crss
ton
toff
Min
120
140
160
±15
0.15
0.7
Typ
1.0
600
350
10
180
60
Ratings
120
140
160
±15
7
7
100
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
W
°C
°C
(Ta = 25°C)
Max Unit
Test conditions
— V ID = 10 mA, VGS = –10 V
1.45
12
1.4
V IG = ±100 µA, VDS = 0
V ID = 100 mA, VDS = 10 V
V ID = 7 A, VGD = 0 *2
S ID = 3 A, VDS = 10 V *2
pF VGS = –5 V, VDS = 10 V,
pF f = 1 MHz
pF
ns VDD = 20 V, ID = 4 A
ns
Rev.2.00 Sep 07, 2005 page 2 of 5



Part Number K1058
Description 2SK1058
Maker Renesas Technology - Renesas Technology
Total Page 6 Pages
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