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  Microsemi Electronic Components Datasheet  


JAN2N2222A

SMALL SIGNAL BIPOLAR NPN SILICON



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JAN2N2222A pdf
580 Pleasant St.
Watertown, MA 02172
PH: (617) 926-0404
FAX: (617) 924-1235
Features
Meets MIL 19500 /255
Collector - Base Voltage 75 V
Collector - Current 800 mA
High Speed, Medium Current Bipolar Transistor
TO-18
2N2222A
SWITCHING
TRANSISTOR
JAN, JANTX, JANTXV
SMALL SIGNAL
BIPOLAR
NPN SILICON
COLLECTOR
BASE
EMITTER
Maximum Ratings
RATING
Collector - Emitter Voltage
Collector - Base Voltage
Emitter - Base Voltage
Collector Current -- Continuous
Total Device Dissipation @ TA = 25 °C
Derate above 25 °C
Total Device Dissipation @ TC = 25 °C
Derate above 25 °C
Operating Junction&Storage Temperature Range
Thermal Characteristics
CHARACTERISTIC
Thermal Resistance, Junction to Ambient
SYMBOL
VCEO
VCBO
VEBO
IC
PD
PD
TJ, Tstg
SYMBOL
Rθ JA
VALUE
50
75
6
800
500
2.85
1.8
10.3
- 65 to + 200
MAX
350
UNIT
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
WATTS
mW/°C
°C
UNIT
°C/W
MSCO275A 01-29-98
DSW2N2222A < - > ( 33807)



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JAN2N2222A pdf
2N2222A
Electrical Characteristics (TA = 25°C unless otherwise noted)
OFF CHARACTERISTIC
SYMBOL
Collector - Emitter Breakdown Voltage (1)
V(BR)CEO
( IC = 10 mA dc, IB = 0 )
Collector - Base Breakdown Voltage (1)
V(BR)CBO
( IC = 10 µAdc, IE = 0 )
Emitter - Base Breakdown Voltage (1)
V(BR)EBO
( IE = 10 µAdc, IC = 0 )
Collector - Emitter Cutoff Current
ICES
( VCE = 50 Vdc, VBE(off) = 0 V )
Collector - Base Cutoff Current
ICBO
( VCB = 60 Vdc, IE = 0 )
( VCB = 60 Vdc, IE = 0, TA = 150 °C )
Emitter - Base Cutoff Current
IEBO
( VEB = 4 Vdc )
ON CHARACTERISTIC
DC Current Gain
( IC = 100 µA dc, VCE = 10 Vdc )
( IC = 1 mA dc, VCE = 10 Vdc )
( IC = 10 mA dc, VCE = 10 Vdc )
( IC = 150 mA dc, VCE = 10 Vdc ) (1)
( IC = 500 mA dc, VCE = 10 Vdc ) (1)
( IC = 10 mA dc, VCE = 10 Vdc, TJ = -55°C )
Collector - Emitter Saturation Voltage
( IC = 150 mAdc, IB = 15 mAdc ) (1)
( IC = 500 mAdc, IB = 50 mAdc ) (1)
Base - Emitter Saturation Voltage
( IC = 150 mAdc, IB = 15 mAdc )
( IC = 500 mAdc, IB = 50 mAdc )
(1)
(1)
SYMBOL
hFE
VCE(sat)
VBE(sat)
MIN
MAX
UNIT
50 Vdc
75 Vdc
6 Vdc
50 nAdc
10 nAdc
10 µAdc
10 nAdc
MIN
MAX
UNIT
50
75 325
100
100 300
30
35
0.3 Vdc
1.0 Vdc
0.6 1.2 Vdc
2.0 Vdc
1. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%
MSCO275A 01-29-98
DSW2N2222A < - > ( 33807)



Part Number JAN2N2222A
Description SMALL SIGNAL BIPOLAR NPN SILICON
Maker Microsemi Corporation - Microsemi Corporation
Total Page 9 Pages
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