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JAN2N1711

NPN LOW POWER SILICON TRANSISTOR


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JAN2N1711 pdf
TECHNICAL DATA
NPN LOW POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/225
Devices
www.DataSheet4U.com
2N1711
2N1890
Qualified Level
JAN
JANTX
MAXIMUM RATINGS
Ratings
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
@ TA = +250C (1)
@ TC = +250C (2)
Operating & Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristics
Thermal Impedance
1) Derate linearly 4.57 mW/0C for TA > 250C
2) Derate linearly 17.2 mW/0C for TC > 250C
Symbol
VCBO
VEBO
IC
PT
TJ, Tstg
Symbol
ZθJX
2N1711 2N1890
75 100
7.0
500
0.8
3.0
-65 to +200
Max.
58
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
IC = 100 µAdc
2N1711, S
2N1890, S
V(BR)CBO
Collector-Emitter Breakdown Voltage
RBE = 10 , IC = 100 mAdc
2N1711, S
2N1890, S
V(BR)CER
Collector-Emitter Breakdown Voltage
IC = 30 mAdc
2N1711, S
2N1890, S
V(BR)CEO
Emitter-Base Breakdown Voltage
IE = 100 µAdc
Collector-Base Cutoff Current
V(BR)EBO
VCB = 60 Vdc
2N1711
ICBO
VCB = 80 Vdc
Emitter-Base Cutoff Current
VEB = 5.0 Vdc
2N1890
IEBO
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Unit
Vdc
Vdc
mAdc
W
W
0C
Unit
0C/W
TO-5*
*See appendix A for package
outline
Min. Max.
Unit
75 Vdc
100
50 Vdc
80
30 Vdc
60
7.0 Vdc
10 ηAdc
10
5.0 ηAdc
120101
Page 1 of 2



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JAN2N1711 pdf
2N1711, 2N1890 JAN SERIES
Characteristics
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio
IC = 10 µAdc, VCE = 10 Vdc
IC = 150 mAdc, VCE = 10 Vdc
IC = 500 mAdc, VCE = 10 Vdc
Collector-Emitter Saturation Voltage
2N1711, S
IC = 150 mAdc, IB = 15 mAdc
2N1711, S
2N1890, S
IC = 50 mAdc, IB = 5.0 mAdc
Base-Emitter Saturation Voltage
2N1890, S
www.DataSheet4U.com IC = 150 mAdc, IB = 15 mAdc
IC = 50 mAdc, IB = 5.0 mVdc
2N1890, S
DYNAMIC CHARACTERISTICS
Small-Signal Short-Circuit Forward-Current Transfer Ratio
IC = 1.0 mAdc, VCE = 5.0 Vdc
IC = 5.0 mAdc, VCE = 10 Vdc
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward-Current Transfer Ratio
IC = 50 mAdc, VCE = 10 Vdc; f = 20 MHz
Small-Signal Short-Circuit Input Impedance
IC = 5.0 mAdc, VCB = 10 Vdc
Small-Signal Short-Circuit Output Admittance
IC = 5.0 mAdc, VCB = 10 Vdc
2N1711, S
2N1890, S
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz f 1.0 MHz
2N1711, S
2N1890, S
SWITCHING CHARACTERISTICS
Turn-On Time + Turn-Off Time
(See figure 1 of MIL-PRF-19500/225)
(3) Pulse Test: Pulse Width 250 to 350µs, Duty Cycle 2.0%.
Symbol
hFE
VCE(sat)
VBE(sat)
hfe
hfe
hib
hob
Cobo
ton + toff
Min. Max. Unit
20
100 300
50
1.5
5.0
1.2
1.3
0.9
Vdc
Vdc
80 200
90 270
3.5 12
4.0 8.0
1.0
.03
8.0 25
5.0 15
30
µΩ
pF
ηs
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2



Part Number JAN2N1711
Description NPN LOW POWER SILICON TRANSISTOR
Maker Microsemi Corporation - Microsemi Corporation
Total Page 3 Pages
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