http://www.www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf



Fairchild Semiconductor Electronic Components Datasheet



J6812

2SJ6812


No Preview Available !

J6812 pdf
www.DataSheet4U.com
www.DataSheet4U.com
FJAF6812
High Voltage Color Display Horizontal
Deflection Output
• High Collector-Base Breakdown Voltage : BVCBO = 1500V
• High Switching Speed : tF(typ.) =0.1µs
• For Color Monitor
1 TO-3PF
1.Base 2.Collector 3.Emitter
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current (DC)
ICP* Collector Current (Pulse)
PC Collector Dissipation
TJ Junction Temperature
TSTG
Storage Temperature
* Pulse Test: PW=300µs, duty Cycle=2% Pulsed
Rating
1500
750
6
12
24
60
150
-55 ~ 150
Units
V
V
V
A
A
W
°C
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
ICES
Collector Cut-off Current
ICBO
Collector Cut-off Current
IEBO
Emitter Cut-off Current
BVEBO
Emitter-Base Breakdown Voltage
hFE1
hFE2
DC Current Gain
VCE(sat)
Collector-Emitter Saturation Voltage
VBE(sat)
Base-Emitter Saturation Voltage
tSTG*
Storage Time
tF* Fall Time
* Pulse Test: PW=20µs, duty Cycle=1% Pulsed
VCB=1400V, RBE=0
VCB=800V, IE=0
VEB=4V, IC=0
IE=500µA, IC=0
VCE=5V, IC=1A
VCE=5V, IC=8A
IC=8A, IB=2A
IC=8A, IB=2A
VCC=200V, IC=7A, RL=30
IB1= 1.4A, IB2= - 2.8A
6
10
5
1 mA
10 µA
1 mA
V
40
8
3V
1.5 V
3 µs
0.2 µs
Thermal Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
RθjC Thermal Resistance, Junction to Case
Typ
1.4
Max
2.08
Units
°C/W
©2001 Fairchild Semiconductor Corporation
Rev. B1, May 2001



No Preview Available !

J6812 pdf
www.DataSheet4U.com
www.DataTSyhepet4icU.acolmCharacteristics
11
10 Ib=1.8A Ib=1.6A Ib=1.4A
9 Ib=1.2A
Ib=1.0A
8 Ib=800mA
7 Ib=600mA
6 Ib=400mA
5 Ib=200mA
4
3
2
1
0
0 2 4 6 8 10 12 14
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristics
100
IC = 5IB
10
125oC
1
75oC
25oC
0.1
Ta = - 25oC
0.01
0.1
1
IC [A], COLLECTOR CURRENT
10
Figure 3. Collector-Emitter Saturation Voltage
14
VCE = 5V
12
10
8
6 125oC
4
75oC
25oC
2
Ta = - 25oC
0
0.0 0.5 1.0 1.5
VBE [V], BASE-EMITTER VOLTAGE
Figure 5. Base-Emitter On Voltage
©2001 Fairchild Semiconductor Corporation
100
125oC 75oC
Ta= - 25oC 25oC
10
VCE = 5V
1
0.1 1 10
IC [A], COLLECTOR CURRENT
Figure 2. DC Current Gain
100
IC = 3IB
10
125oC
1
75oC
0.1 25oC
Ta = - 25oC
0.01
0.1
1
IC [A], COLLECTOR CURRENT
10
Figure 4. Collector-Emitter Saturation Voltage
10
tSTG
1
0.1
RESISTIVE LOAD
Vcc = 200V
IC = 7A
IB1 = 1.4A
0.01
-0.1
-1
tF
IB2 [A], REVERSE BASE CURRENT
Figure 6. Switching Time
-10
Rev. B1, May 2001



Part Number J6812
Description 2SJ6812
Maker Fairchild Semiconductor - Fairchild Semiconductor
Total Page 5 Pages
PDF Download
J6812 pdf
Download PDF File
J6812 pdf
View for Mobile




Featured Datasheets

Part Number Description Manufacturers PDF
J6806D FJAF6806D J6806D
Fairchild Semiconductor
PDF
J681 2SJ681 J681
Toshiba
PDF
J6810 NPN Triple Diffused Planar Silicon Transistor J6810
Fairchild Semiconductor
PDF
J6810D FJAF6810D J6810D
Fairchild Semiconductor
PDF
J6812 FJAF6812 J6812
Fairchild Semiconductor
PDF
J6812 2SJ6812 J6812
Fairchild Semiconductor
PDF


Part Number Start With

0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z

site map

webmaste! click here

contact us

Buy Components