TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (π−MOSV)
Chopper Regulator, DC−DC Converter and Motor Drive
z Low drain-source ON resistance : RDS (ON) = 0.6 Ω (typ.)
z High forward transfer admittance : |Yfs| = 5.3 S (typ.)
z Low leakage current : IDSS = −100 μA (max) (VDS = −250 V)
z Enhancement mode : Vth = −1.5 to −3.5 V (VDS = −10 V, ID = −1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Drain−gate voltage (RGS = 20 kΩ)
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
Repetitive avalenche energy (Note 3)
Storage temperature range
−55 to 150
Weight: 1.9 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Thermal resistance, channel to case
Thermal resistance, channel to ambient
3.57 °C / W
62.5 °C / W
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VDD = −50 V, Tch = 25°C (initial), L = 6.3 mH, RG = 25 Ω, IAR = −6.5 A
Note 3: Repetitive rating; Pulse width limited by maximum channel temperature.
This transistor is an electrostatic sensitive device.
Please handle with caution.