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Toshiba Electronic Components Datasheet



J512

2SJ512



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J512 pdf
2SJ512
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2−π−MOSV)
2SJ512
Chopper Regulator, DCDC Converter and Motor Drive
Applications
Unit: mm
l Low drainsource ON resistance : RDS (ON) = 1.0 (typ.)
l High forward transfer admittance : |Yfs| = 3.7 S (typ.)
l Low leakage current : IDSS = −100 µA (max) (VDS = 250 V)
l Enhancementmode : Vth = −1.5~3.5 V (VDS = −10 V, ID = −1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drainsource voltage
Draingate voltage (RGS = 20 k)
Gatesource voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalenche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Rating
250
250
±20
5
20
30
155
5
3.0
150
55~150
Unit
V
V
V
A
A
W
mJ
A
mJ
°C
°C
JEDEC
JEITA
SC-67
TOSHIBA
2-10R1B
Weight: 1.9 g (typ.)
Thermal Characteristics
Characteristics
Symbol Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Rth (chc)
Rth (cha)
4.16
62.5
°C / W
°C / W
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VDD = 50 V, Tch = 25°C (initial), L = 10.5 mH, RG = 25 , IAR = 5 A
Note 3: Repetitive rating; Pulse width limited by maximum channel temperature.
This transistor is an electrostatic sensitive device.
Please handle with caution.
1 2002-09-02



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J512 pdf
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Drain cutoff current
Drainsource breakdown
voltage
Gate threshold voltage
Drainsource ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Symbol
Test Condition
IGSS
IDSS
VGS = ±16 V, VDS = 0 V
VDS = 250 V, VGS = 0 V
V (BR) DSS ID = 10 mA, VGS = 0 V
Vth
RDS (ON)
|Yfs|
Ciss
Crss
Coss
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 2.5 A
VDS = 10 V, ID = 2.5 A
VDS = 10 V, VGS = 0 V, f = 1 MHz
tr
Switching time
Turnon time
Fall time
ton
tf
Turnoff time
toff
Total gate charge (Gatesource
plus gatedrain)
Qg
VDD ≈ −200 V, VGS = 10 V,
Gatesource charge
Qgs ID = 5 A
Gatedrain (“miller”) charge
Qgd
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
IDR = 5 A, VGS = 0 V
IDR = 5 A, VGS = 0 V
dIDR / dt = 100 A / µs
Marking
2SJ512
Min
250
1.5
1.8
Typ.
1.0
3.7
800
80
250
Max
±10
100
3.5
1.25
Unit
µA
µA
V
V
S
pF
— 16 —
— 35 —
ns
—9—
— 70 —
— 22 —
— 14 — nC
—8—
Min Typ. Max Unit
— — 5 A
20
A
— — 2.0 V
— 205 —
ns
— 2.1 — µC
2 2002-09-02



Part Number J512
Description 2SJ512
Maker Toshiba Semiconductor - Toshiba Semiconductor
Total Page 6 Pages
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