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Toshiba Electronic Components Datasheet



J511

2SJ511



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J511 pdf
2SJ511
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2−π−MOSV)
2SJ511
Chopper Regulator, DCDC Converter and Motor Drive
Applications
l 4 V gate drive
l Low drainsource ON resistance
: RDS (ON) = 0.32 (typ.)
l High forward transfer admittance
: |Yfs| = 1.4 S (typ.)
l Low leakage current : IDSS = −100 µA (max) (VDS = 30 V)
l Enhancementmode : Vth = 0.8~2.0 V (VDS = −10 V, ID = −1 mA)
Maximum Ratings (Ta = 25°C)
Unit: mm
Characteristics
Drainsource voltage
Draingate voltage (RGS = 20 k)
Gatesource voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation
Drain power dissipation
(Note 2)
Single pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy (Note 4)
Channel temperature
Storage temperature range
Thermal Characteristics
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
PD
EAS
IAR
EAR
Tch
Tstg
Rating
30
30
±20
2
6
0.5
1.5
55
2
0.05
150
55~150
Unit
V
V
V
A
A
W
W
mJ
A
mJ
°C
°C
JEDEC
JEITA
TOSHIBA
25K1B
Weight: 0.05 g (typ.)
Marking
Characteristics
Symbol Max Unit
Thermal resistance, channel to
ambient
Rth (cha)
250 °C / W
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: Mounted on ceramic substrate (25.4 mm × 25.4 mm × 0.8 mm)
Note 3: VDD = 25 V, Tch = 25°C (initial), L = 10 mH, RG = 25 , IAR = 2 A
Note 4: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device.
Please handle with caution.
ZF
(The two digits represent
the part number.)
1 2002-08-09



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J511 pdf
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Drain cutoff current
Drainsource breakdown
voltage
Gate threshold voltage
Drainsource ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Symbol
Test Condition
IGSS
IDSS
VGS = ±16 V, VDS = 0 V
VDS = 30 V, VGS = 0 V
V (BR) DSS ID = 10 mA, VGS = 0 V
Vth
RDS (ON)
|Yfs|
Ciss
Crss
Coss
VDS = 10 V, ID = 1 mA
VGS = 4 V, ID = 1 A
VGS = 10 V, ID = 1 A
VDS = 10 V, ID = 1 A
VDS = 10 V, VGS = 0 V, f = 1 MHz
tr
Switching time
Turnon time
Fall time
ton
tf
Turnoff time
toff
Total gate charge (Gatesource
plus gatedrain)
Qg
Gatesource charge
Qgs VDD ≈ −24 V, VGS = 10 V, ID = 2 A
Gatedrain (“miller”) charge
Qgd
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Continuous drain reverse current
(Note 1)
IDR (Note 1)
Pulse drain reverse current
(Note 1)
IDRP (Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
VDSF
trr
Qrr
IDR = 2 A, VGS = 0 V
IDR = 2 A, VGS = 0 V
dIDR / dt = 50 A / µs
2SJ511
Min
30
0.8
0.7
Typ.
0.55
0.32
1.4
160
30
85
Max
±10
100
2.0
0.76
0.45
Unit
µA
µA
V
V
S
pF
— 30 —
— 45 —
ns
— 30 —
— 120 —
— 5.5 —
— 4.3 —
— 1.2 —
nC
Min Typ. Max Unit
— — 2 A
— — 6 A
— — 1.5 V
— 40 — ns
— 18 — nC
2 2002-08-09



Part Number J511
Description 2SJ511
Maker Toshiba - Toshiba
Total Page 6 Pages
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