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Sanyo Electric Components Datasheet


J340

2SJ340



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J340 pdf
Ordering number:ENN6420
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P-Channel Silicon MOSFET
2SJ340
Ultrahigh-Speed Switching Applications
Features
· Low ON-resistance.
· Ultrahigh-speed switching.
· 4V drive.
· Enables simplified fabrication, high-density mount-
ing, and miniaturization in end products due to the
surface mountable package.
Package Dimensions
unit:mm
2093A
[2SJ340]
10.2
4.5
1.3
unit:mm
2090A
1.2
0.8
123
2.55 2.55
0.4
1 : Gate
2 : Drain
3 : Source
SANYO : SMP
[2SJ340]
10.2
4.5 1.3
1 23
0.8 1.2
2.55 2.55
2.55 2.55
0 to 0.3
0.4
1 : Gate
2 : Drain
3 : Source
SANYO : SMP-FD
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
80700TS (KOTO) TA-2165 No.6420–1/4



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J340 pdf
2SJ340
Specifications
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Absolute Maximum Ratings at Ta = 25˚C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Symbol
VDSS
VGSS
ID
IDP
Allowable Power Dissipation
PD
Channel Temperature
Storage Temperature
Tch
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
PW10µs, duty cycle1%
Tc=25˚C
Parameter
Drain-to-Source Breakdown Voltage
Gate-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage
Marking:J304
Symbol
Conditions
V(BR)DSS
V(BR)GSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VSD
ID=–1mA, VGS=0
IG=±100µA, VDS=0
VDS=–60V, VGS=0
VGS=±16V, VDS=0
VDS=–10V, ID=–1mA
VDS=–10V, ID=–15A
ID=–15A, VGS=–10V
ID=–15A, VGS=–4V
VDS=–20V, f=1MHz
VDS=–20V, f=1MHz
VDS=–20V, f=1MHz
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
IS=–30A, VGS=0
Switching Time Test Circuit
Vin
0V
--10V
PW=10µs
D.C.1%
P.G
Vin
G
50
VDD=--30V
ID=--15A
RL=2
D
VOUT
2SJ340
S
Ratings
–60
±20
–30
–120
1.65
70
150
–55 to +150
Unit
V
V
A
A
W
W
˚C
˚C
Ratings
min typ
–60
±20
–1.0
15
25
30
40
3800
1200
300
30
150
450
220
–1.0
max
–100
±10
–2.0
40
55
–1.5
Unit
V
V
µA
µA
V
S
m
m
pF
pF
pF
ns
ns
ns
ns
V
No.6420–2/4



Part Number J340
Description 2SJ340
Maker Sanyo Semiconductor Corporation - Sanyo Semiconductor Corporation
Total Page 4 Pages
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