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  ON Semiconductor Electronic Components Datasheet  


J309

JFET VHF/UHF Amplifiers


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J309 pdf
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J309, J310
Preferred Device
JFET VHF/UHF Amplifiers
N−Channel — Depletion
Features
Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain −Source Voltage
Gate −Source Voltage
Forward Gate Current
Total Device Dissipation @ TA = 25°C
Derate above = 25°C
VDS
VGS
IGF
PD
25 Vdc
25 Vdc
10 mAdc
350 mW
2.8 mW/°C
Junction Temperature Range
TJ −65 to +125 °C
Storage Temperature Range
Tstg −65 to +150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
http://onsemi.com
1 DRAIN
3
GATE
2 SOURCE
TO−92
CASE 29−11
1
2
STYLE 5
3
MARKING DIAGRAM
J3xx
AYWW G
G
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
March, 2006 − Rev. 1
1
J3xx = Device Code
xx = 09 or 10
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
J309/D



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J309 pdf
J309, J310
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Gate −Source Breakdown Voltage
(IG = −1.0 mAdc, VDS = 0)
Gate Reverse Current
(VGS = −15 Vdc, VDS = 0, TA = 25°C)
(VGS = −15 Vdc, VDS = 0, TA = +125°C)
Gate Source Cutoff Voltage
(VDS = 10 Vdc, ID = 1.0 nAdc)
J309
J310
ON CHARACTERISTICS
Zero −Gate −Voltage Drain Current(1)
(VDS = 10 Vdc, VGS = 0)
J309
J310
Gate−Source Forward Voltage
(VDS = 0, IG = 1.0 mAdc)
SMALL− SIGNAL CHARACTERISTICS
Common−Source Input Conductance
(VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz)
J309
J310
Common−Source Output Conductance
(VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz)
Common−Gate Power Gain
(VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz)
Common−Source Forward Transconductance
(VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz)
Common−Gate Input Conductance
(VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz)
Common−Source Forward Transconductance
(VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz)
J309
J310
Common−Source Output Conductance
(VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz)
Common−Gate Forward Transconductance
(VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz)
J309
J310
Common−Gate Output Conductance
(VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz)
J309
J310
Gate−Drain Capacitance
(VDS = 0, VGS = −10 Vdc, f = 1.0 MHz)
Gate−Source Capacitance
(VDS = 0, VGS = −10 Vdc, f = 1.0 MHz)
FUNCTIONAL CHARACTERISTICS
Equivalent Short−Circuit Input Noise Voltage
(VDS = 10 Vdc, ID = 10 mAdc, f = 100 Hz)
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 3.0%.
Symbol
V(BR)GSS
IGSS
VGS(off)
IDSS
VGS(f)
Re(yis)
Re(yos)
Gpg
Re(yfs)
Re(yig)
gfs
gos
gfg
gog
Cgd
Cgs
en
Min Typ Max Unit
−25 −
− Vdc
− − −1.0 nAdc
− − −1.0 mAdc
Vdc
−1.0 − −4.0
−2.0 − −6.5
mAdc
12 − 30
24 − 60
− − 1.0 Vdc
mmhos
− 0.7 −
− 0.5 −
− 0.25 − mmhos
− 16 − dB
− 12 − mmhos
− 12 − mmhos
mmhos
10000 − 20000
8000
− 18000
− − 250 mmhos
mmhos
− 13000 −
− 12000 −
mmhos
− 100 −
− 150 −
− 1.8 2.5 pF
− 4.3 5.0 pF
− 10 − nVń ǸHz
http://onsemi.com
2



Part Number J309
Description JFET VHF/UHF Amplifiers
Maker ON Semiconductor - ON Semiconductor
Total Page 5 Pages
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