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InterFET
InterFET


J308

N-Channel Silicon Junction Field-Effect Transistor



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B-61
J308, J309
N-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at TA = 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
– 25 V
10 mA
360 mW
3.27 mW/°C
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
V(BR)GSS
Gate Reverse Current
IGSS
Gate Source Cutoff Voltage
Gate Source Forward Voltage
Drain Saturation Current (Pulsed)
VGS(OFF)
VGS(F)
IDSS
Dynamic Electrical Characteristics
Common Source Forward Transconductance
Common Source Output Conductance
Common Gate Forward Transconductance
Common Gate Output Transconductance
Gate Drain Capacitance
Gate Source Capacitance
Equivalent Short Circuit
Input Noise Voltage
g fs
g os
g fg
g og
Cdg
Cgs
N
Common Source Forward
Transconductance
Common Gate Input Conductance
Common Source Input Conductance
Common Source Output Conductance
Common Gate Power Gain
at Noise Match
Re(Yfs)
Re(Yig)
Re(Yis)
Re(Gos)
Gpg
Noise Figure
NF
J308 J309
Min Typ Max Min Typ Max Unit
– 25 – 25
–1
–1
– 1 – 6.5 – 1
1
12 60 12
V
– 1 nA
– 1 µA
–4 V
1V
30 mA
Process NJ72
Test Conditions
IG = – 1µA, VDS = ØV
VGS = – 15V, VDS = ØV
VGS = – 15V, VDS = ØV
VDS = 10V, ID = 1 nA
VDS = ØV, IG = 1 mA
VDS = 10V, VGS = ØV
TA = +125°C
8000 17000
10000 17000
250 250
13000
13000
150 100
1.8 2.5
1.8 2.5
45
45
µS
µS
µS
µS
pF
pF
10 10 nV/Hz
VDS = 10V, ID = 10 mA
VDS = 10V, ID = 10 mA
VDS = 10V, ID = 10 mA
VDS = 10V, ID = 10 mA
VDS = ØV, VGS = – 10V
VDS = ØV, VGS = – 10V
VDS = 10V, ID = 10 mA
12 12 µS VDS = 10V, ID = 10 mA
14 14 µS VDS = 10V, ID = 10 mA
0.4 0.4 µS VDS = 10V, ID = 10 mA
0.15 0.15 µS VDS = 10V, ID = 10 mA
16 16 dB VDS = 10V, ID = 10 mA
11 11 dB VDS = 10V, ID = 10 mA
1.5 1.5 dB VDS = 15V, ID = 10 mA
2.7 2.7 dB VDS = 15V, ID = 10 mA
f = 1 kHz
f = 1 kHz
f = 1 kHz
f = 1 kHz
f = 1 MHz
f = 1 MHz
f = 100 kHz
f = 105 MHz
f = 105 MHz
f = 105 MHz
f = 105 MHz
f = 105 MHz
f = 450 MHz
f = 105 MHz
f = 450 MHz
TOÐ226AA Package
Dimensions in Inches (mm)
Pin Configuration
1 Drain, 2 Source, 3 Gate
www.interfet.com
Surface Mount
SMPJ308, SMPJ309
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375



Part Number J308
Description N-Channel Silicon Junction Field-Effect Transistor
Maker InterFET - InterFET
Total Page 1 Pages
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