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Toshiba Electronic Components Datasheet



J304

2SJ304



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J304 pdf
2SJ304
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2−π−MOSIV)
2SJ304
DCDC Converter, Relay Drive and Motor Drive
Applications
Unit: mm
z 4-V gate drive
z Low drainsource ON resistance : RDS (ON) = 80 m(typ.)
z High forward transfer admittance : |Yfs| = 8.0 S (typ.)
z Low leakage current : IDSS = 100 μA (max) (VDS = 60 V)
z Enhancement mode : Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
Draingate voltage (RGS = 20 k)
Gatesource voltage
Drain current
DC (Note 1)
Pulse(Note 1)
Drain power dissipation (Tc = 25°C)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
Tch
Tstg
60
60
±20
14
56
40
150
55 to 150
V
V
V
A
W
°C
°C
JEDEC
JEITA
SC-67
TOSHIBA
2-10R1B
Weight: 1.9 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Rth (chc)
Rth (cha)
3.125
62.5
°C / W
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
This transistor is an electrostatic-sensitive device.
Please handle with caution.
1 2009-09-29



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J304 pdf
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Drain cutoff current
Drainsource breakdown
voltage
Gate threshold voltage
Drainsource ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Symbol
IGSS
IDSS
Test Condition
VGS = ±16 V, VDS = 0 V
VDS = 60 V, VGS = 0 V
V (BR) DSS ID = 10 mA, VGS = 0 V
Vth
RDS (ON)
|Yfs|
Ciss
Crss
Coss
VDS = 10 V, ID = 1 mA
VGS = 4 V, ID = 5 A
VGS = 10 V, ID = 7 A
VDS = 10 V, ID = 7 A
VDS = 10 V, VGS = 0 V, f = 1 MHz
tr
2SJ304
Min Typ. Max Unit
― ― ±10 μA
― ― −100 μA
60
V
0.8
5.0
130
80
8.0
1200
220
550
2.0
190
120
V
m
S
pF
20
Turnon time
Switching time
Fall time
ton
tf
30
ns
25
Turnoff time
Total gate charge (Gatesource
plus gatedrain)
Gatesource charge
Gatedrain (“miller”) charge
toff
Qg
Qgs VDD ≈ −48 V, VGS = 10 V, ID = 14 A
Qgd
100
45
30
15
nC
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
IDR = 14 A, VGS = 0 V
IDR = 14 A, VGS = 0 V
dIDR / dt = 50 A / μs
Min Typ. Max Unit
― ― −14 A
― ― −56 A
― ― 1.7 V
110
ns
0.18
μC
Marking
J304
Part No. (or abbreviation code)
Lot No.
Note 2
Note 2: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
2 2009-09-29



Part Number J304
Description 2SJ304
Maker Toshiba - Toshiba
Total Page 6 Pages
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