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Hitachi Power Semiconductor Device Electronic Components Datasheet



J297

Silicon P-Channel MOS FET



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J297 pdf
2SJ297(L), 2SJ297(S)
Silicon P-Channel MOS FET
Application
High speed power switching
Features
Low on-resistance
High speed switching
Low drive current
4 V gate drive device can be driven from 5 V source
Suitable for switching regulator, DC-DC converter
Avalanche ratings
Outline
LDPAK
4
123
D
G
S
4
12
3
1. Gate
2. Drain
3. Source
4. Drain
November 1996



No Preview Available !

J297 pdf
2SJ297(L), 2SJ297(S)
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes 1. PW 10 µs, duty cycle 1%
2. Value at TC = 25°C
3. Value at Tch = 25°C, Rg 50
Symbol
VDSS
VGSS
ID
I *1
D(pulse)
IDR
IAP*3
EAR*3
Pch*2
Tch
Tstg
Ratings
–60
±20
–20
–80
–20
–20
34
60
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
°C
°C
2



Part Number J297
Description Silicon P-Channel MOS FET
Maker Hitachi - Hitachi
Total Page 4 Pages
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