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Hitachi Power Semiconductor Device Electronic Components Datasheet



J291

2SJ291



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J291 pdf
2SJ291
Silicon P-Channel MOS FET
www.DataSheet4U.com
Application
High speed power switching
Features
Low on-resistance
High speed switching
Low drive current
4 V gate drive device can be driven from 5 V source
Suitable for switching regulator, DC-DC converter
Avalanche ratings
Outline
TO-220AB
D 123
1. Gate
G 2. Drain
(Flange)
3. Source
S
November 1996



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J291 pdf
2SJ291
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
www.DataSheet4U.com Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes 1. PW 10 µs, duty cycle 1%
2. Value at TC = 25°C
3. Value at Tch = 25°C, Rg 50
Symbol
VDSS
VGSS
ID
I *1
D(pulse)
IDR
IAP*3
EAR*3
Pch*2
Tch
Tstg
Ratings
–60
±20
–20
–80
–20
–20
34
60
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
°C
°C
2



Part Number J291
Description 2SJ291
Maker Hitachi Semiconductor - Hitachi Semiconductor
Total Page 9 Pages
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