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Hitachi Power Semiconductor Device Electronic Components Datasheet



J117

2SJ117



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J117 pdf
2SJ117
Silicon P-Channel MOS FET
ADE-208-1180 (Z)
1st. Edition
Mar. 2001
Application
High speed power switching
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Features
High speed switching
Good frequency characteristics
Wide area of safe operation
Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators.
Outline
TO-220AB
D 123
1. Gate
G 2. Drain
(Flange)
3. Source
S



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J117 pdf
2SJ117
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. Value at TC = 25°C
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Symbol
VDSS
VGSS
ID
I D(pulse)
I DR
Pch*1
Tch
Tstg
Ratings
–400
±20
–2
–4
–2
40
150
–55 to +150
Unit
V
V
A
A
A
W
°C
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown
voltage
V(BR)DSS –400
Gate to source leak current
I GSS
Zero gate voltage drain current IDSS
Gate to source cutoff voltage VGS(off)
Static drain to source on state RDS(on)
resistance
–2.0
Forward transfer admittance
Input capacitance
|yfs|
Ciss
0.4
Output capacitance
Coss —
Reverse transfer capacitance Crss —
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward
voltage
t d(on)
tr
t d(off)
tf
VDF
Body to drain diode reverse
recovery time
t rr
Note: 1. Pulse test
Typ
5
0.7
520
110
15
10
25
45
35
–0.8
300
Max
±1
–1
–5.0
7
Unit
V
µA
mA
V
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test conditions
ID = –10 mA, VGS = 0
VGS = ±20 V, VDS = 0
VDS = –320 V, VGS = 0
ID = –1 mA, VDS = –10 V
ID = –1 A, VGS = –15 V*1
ID = –1 A, VDS = –20 V*1
VDS = –10 V, VGS = 0,
f = 1 MHz
ID = –2 A, VGS = –15 V,
RL = 15
IF = –1 A, VGS = 0
IF = –1 A, VGS = 0,
diF/dt = 100 A/µs
2



Part Number J117
Description 2SJ117
Maker Hitachi Semiconductor - Hitachi Semiconductor
Total Page 8 Pages
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