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Linear Integrated Systems
Linear Integrated Systems


J112

SINGLE N-CHANNEL JFET



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J112 pdf
Linear Integrated Systems
FEATURES
DIRECT REPLACEMENT FOR SILICONIX J/SST111 SERIES
LOW GATE LEAKAGE CURRENT
5pA
FAST SWITCHING
ABSOLUTE MAXIMUM RATINGS1
4ns
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
-55 to 150°C
Junction Operating Temperature
-55 to 135°C
Maximum Power Dissipation
Continuous Power Dissipation (J)
360mW
Continuous Power Dissipation (SST)
350mW
Maximum Currents
Gate Current
50mA
Maximum Voltages
Gate to Drain
-35V
Gate to Source
-35V
J/SST111 SERIES
SINGLE N-CHANNEL JFET
J SERIES
TO-92
BOTTOM VIEW
DSG
123
TO 92
SST SERIES
SOT-23
TOP VIEW
D1
S2
3G
STATIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated)
SYM. CHARACTERISTIC
TYP J/SST111 J/SST112 J/SST113
MIN MAX MIN MAX MIN MAX
BVGSS Gate to Source Breakdown Voltage
-35
-35
-35
VGS(off) Gate to Source Cutoff Voltage
-3 -10 -1 -5
-3
VGS(F)
IDSS
Gate to Source Forward Voltage
0.7
Drain to Source Saturation Current2
20
5
2
IGSS Gate Leakage Current
-0.005
-1
-1
-1
IG Gate Operating Current
-5
ID(off) Drain Cutoff Current
0.005
1
1
1
rDS(on) Drain to Source On Resistance
30 50 100
UNIT
V
mA
nA
pA
nA
CONDITIONS
IG = -1µA, VDS = 0V
VDS = 5V, ID = 1µA
IG = 1mA, VDS = 0V
VDS = 15V, VGS = 0V
VGS = -15V, VDS = 0V
VDG = 15V, ID = 10mA
VDS = 5V, VGS = -10V
IG = 1mA, VDS = 0V
Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261



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J112 pdf
DYNAMIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated)
SYM. CHARACTERISTIC
TYP J/SST111 J/SST112 J/SST113 UNIT
MIN MAX MIN MAX MIN MAX
gfs Forward Transconductance
gos Output Conductance
6
25
mS
µS
rds(on) Drain to Source On Resistance
30 50 100
Ciss Input Capacitance
Crss Reverse Transfer Capacitance
7
3
12 12 12
pF
555
en Equivalent Noise Voltage
3
nV/Hz
CONDITIONS
VDS = 20V, ID = 1mA
f = 1kHz
VGS = 0V, ID = 0mA
f = 1kHz
VDS = 0V, VGS = -10V
f = 1MHz
VDG = 10V, ID = 1mA
f = 1 kHz
SWITCHING CHARACTERISTICS
SYM. CHARACTERISTIC TYP UNIT
td(on)
tr
td(off)
tf
Turn On Time
Turn Off Time
2
2 ns
6
15
CONDITIONS
VDD = 10V
VGS(H) = 0V
SWITCHING CIRCUIT CHARACTERISTICS
SYM. J/SST111 J/SST112 J/SST113
VGS(L)
RL
ID(on)
-12V
800
12mA
-7V
1600
6mA
-5V
3200
3mA
TO-92
SOT-23
0.175
0.195
0.170 LS XXX
0.195 YYWW
0.130
0.155
0.045
0.060
0.89
1.03
1.78
2.05
1
0.37
0.51
3 2.80
3.04
2
0.500
0.610
0.016
0.022
0.014
0.020
123
0.095
0.105
0.045
0.055
DIMENSIONS
IN INCHES.
1.20
1.40
0.89 2.10
1.12 2.64
0.085
0.180
0.013
0.100
0.55
DIMENSIONS IN
MILLIMETERS
SWITCHING TEST CIRCUIT
VDD
VGS(H)
VGS(L)
1k51
RL
OUT
51
NOTES
1. Absolute maximum ratings are limiting values above which serviceability may be impaired.
2. Pulse test: PW 300µs, Duty Cycle 3%
Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its
use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Linear Integrated Systems.
Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261



Part Number J112
Description SINGLE N-CHANNEL JFET
Maker Linear Integrated Systems - Linear Integrated Systems
Total Page 2 Pages
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