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International Rectifier Electronic Components Datasheet



IB6N60A

IRFIB6N60A



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IB6N60A pdf
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PD - 91813
SMPS MOSFET IRFIB6N60A
Applications
l Switch Mode Power Supply ( SMPS )
l Uninterruptable Power Supply
l High speed power switching
l High Voltage Isolation = 2.5KVRMS†
Benefits
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Voltage and Current
HEXFET® Power MOSFET
VDSS
600V
Rds(on) max ID
0.75W
5.5A
G DS
TO-220 FULLPAK
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
Max.
5.5
3.5
37
60
0.48
± 30
5.0
-55 to + 150
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
V/ns
°C
Typical SMPS Topologies:
l Single Transistor Forward
l Active Clamped Forward
Notes  through †are on page 8
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01/12/99



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IRFIB6N60A
Static @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
RDS(on)
VGS(th)
IDSS
IGSS
Parameter
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
Conditions
600 ––– ––– V VGS = 0V, ID = 250µA
––– ––– 0.75 W VGS = 10V, ID = 3.3A „
2.0 ––– 4.0 V VDS = VGS, ID = 250µA
––– ––– 25
––– ––– 250
µA VDS = 600V, VGS = 0V
VDS = 480V, VGS = 0V, TJ = 150°C
––– ––– 100 nA VGS = 30V
––– ––– -100
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
gfs Forward Transconductance
Qg Total Gate Charge
Qgs Gate-to-Source Charge
Qgd Gate-to-Drain ("Miller") Charge
td(on)
Turn-On Delay Time
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
Coss
Output Capacitance
Coss
Output Capacitance
Coss eff. Effective Output Capacitance
Avalanche Characteristics
Min. Typ. Max. Units
Conditions
5.5 ––– ––– S VDS = 25V, ID = 5.5A
––– ––– 49
––– ––– 13
––– ––– 20
––– 13 –––
ID = 9.2A
nC VDS = 400V
VGS = 10V, See Fig. 6 and 13 „
VDD = 300V
––– 25 ––– ns ID = 9.2A
––– 30 –––
RG = 9.1W
––– 22 –––
RD = 35.5W,See Fig. 10 „
––– 1400 –––
VGS = 0V
––– 180 –––
VDS = 25V
––– 7.1 ––– pF ƒ = 1.0MHz, See Fig. 5
––– 1957 –––
––– 49 –––
––– 96 –––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 480V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 480V …
Parameter
EAS Single Pulse Avalanche Energy‚
IAR Avalanche Current
EAR Repetitive Avalanche Energy
Thermal Resistance
Typ.
–––
–––
–––
Max.
290
9.2
6.0
Units
mJ
A
mJ
RqJC
RqJA
Parameter
Junction-to-Case
Junction-to-Ambient
Typ.
–––
–––
Max.
2.1
65
Units
°C/W
Diode Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse RecoveryCharge
ton Forward Turn-On Time
2
Min. Typ. Max. Units
Conditions
––– ––– 5.5
––– ––– 37
MOSFET symbol
A showing the
integral reverse
p-n junction diode.
G
D
S
––– ––– 1.5 V TJ = 25°C, IS = 9.2A, VGS = 0V „
––– 530 800 ns TJ = 25°C, IF = 9.2A
––– 3.0 4.4 µC di/dt = 100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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Part Number IB6N60A
Description IRFIB6N60A
Maker International Rectifier - International Rectifier
Total Page 8 Pages
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