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Agilent(Hewlett-Packard)
Agilent(Hewlett-Packard)


IAM-81008

Silicon Bipolar MMIC 5 GHz Active Double Balanced Mixer/IF Amp



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IAM-81008 pdf
Silicon Bipolar MMIC 5␣ GHz
Active Double Balanced
Mixer/IF␣ Amp
Technical Data
IAM-81008
Features
• RF-IF Conversion Gain
From 0.05– 5 GHz
• IF Conversion Gain From
DC to 1 GHz
• Low Power Dissipation:
65␣ mW at V CC = 5 V Typical
• Single Polarity Bias Supply:
V = 4 to 8 V
CC
• Load-insensitive Performance
• Conversion Gain Flat Over
Temperature
• Low LO Power Requirements:
–5␣ dBm Typical
• Low Cost Plastic Surface
Mount Package
Typical applications include
frequency down conversion,
modulation, demodulation and
phase detection. Markets include
fiber-optics, GPS satelite navigation,
mobile radio, and battery powered
communications receivers.
The IAM series of Gilbert multiplier-
based frequency converters is
fabricated using HP’s 10␣ GHz, fT,
25␣ GHz f MAX ISOSAT™-I silicon
bipolar process. This process uses
nitride self alignment,
submicrometer lithography, trench
isolation, ion implantation, gold
metallization and polyimide inter-
metal dielectric and scratch protec-
tion to achieve excellent perfor-
mance, uniformity and reliability.
Plastic SO-8 Package
Pin Configuration
GROUND AND
THERMAL 1
CONTACT
VCC1
2
GROUND 3
RFIN
4
8 GROUND AND
THERMAL
7 CONTACT
6 RFOUT AND VCC2
5 POWER CONTROL
Description
The IAM-81008 is a complete low
power consumption, double
balanced active mixer housed in a
miniature low cost plastic surface
mount package. It is designed for
narrow or wide bandwidth commer-
cial and industrial applications
having RF inputs up to 5 GHz.
Operation at RF and LO frequencies
less than 50 MHz can be achieved
using optional external capacitors
to ground. The IAM-81008 is
particularly well suited for applica-
tions that require load-insensitive
conversion and good spurious
signal suppression with minimum
LO and bias power consumption.
Typical Biasing Configuration and
Functional Block Diagram
IF Output
Vee = 0 V
Cblock
1
2
3
Cblock
8
7
6
Optional Low
Frequencies
RF Ground
VCC = 5 V
RF Input
4
Cblock
5
Cblock
Optional Low
LO Ground
Note: No external baluns are required.
LO Input
7-119
5965-9107E
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IAM-81008 pdf
IAM-81008 Absolute Maximum Ratings
Parameter
Absolute Maximum[1]
Device Voltage
Power Dissipation2,3
RF Input Power
LO Input Power
Junction Temperature
Storage Temperature
10 V
300 mW
+14 dBm
+14 dBm
150°C
–65 to 150°C
Thermal Resistance:
θjc = 80°C/W
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. TCASE = 25°C.
3. Derate at 4.4 mW/°C for TC > 82°C.
IAM-81008 Part Number Ordering Information
Part Number
Devices Per Reel
Reel Size
IAM-81008-TR1
1000
7"
For more information, see “Tape and Reel Packaging for Semmiconductor Devices”.
IAM-81008 Electrical Specifications[1], TA = 25°C
Symbol Parameters and Test Conditions: Vcc = 5 V, ZO = 50 , LO =–5 dBm, RF = –20 dBm Units Min. Typ. Max.
GC
F3 dBRF
F3 dB IF
P1 dB
IP3
NF
Conversion Gain
RF Bandwidth (GC 3 dB Down)
IF Bandwidth (GC 3 dB Down)
IF Output Power at 1 dB Gain Compression
IF Output Third Order Intercept Point
SSB Noise Figure
RF = 2 GHz, LO = 1.75 GHz
IF = 250 MHz
LO = 2 GHz
RF = 2 GHz, LO = 1.75 GHz
RF = 2 GHz, LO = 1.75 GHz
RF = 2 GHz, LO = 1.75 GHz
dB
GHz
GHz
dBm
dBm
dB
6.0
8.5 10
3.5
0.6
–6
3
17
RF Port VSWR
f = 0.05 to 3.5 GHz
1.5:1
VSWR LO Port VSWR
f = 0.05 to 3.5 GHz
2.0:1
IF Port VSWR
f < 1 GHz
1.5:1
RFif RF Feedthrough at IF Port
LOif LO Leakage at IF Port
LOrf LO Leakage at RF Port
ICC Supply Current
RF = 2 GHz, LO = 1.75 GHz
LO = 1.75 GHz
LO = 1.75 GHz
dBc
dBm
dBm
mA
10
–25
–25
–30
13 16
Note:
1. The recommended operating voltage range for this device is 4 to 8 V. Typical performance as a function of voltage is on
the following page.
7-120
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Part Number IAM-81008
Description Silicon Bipolar MMIC 5 GHz Active Double Balanced Mixer/IF Amp
Maker Agilent(Hewlett-Packard) - Agilent(Hewlett-Packard)
Total Page 4 Pages
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