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H15R1203

Reverse conducting IGBT



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H15R1203 pdf
ResonantSwitchingSeries
ReverseconductingIGBTwithmonolithicbodydiode
IHW15N120R3
Datasheet
IndustrialPowerControl



No Preview Available !

H15R1203 pdf
ResonantSwitchingSeries
IHW15N120R3
ReverseconductingIGBTwithmonolithicbodydiode

Features:
•Powerfulmonolithicbodydiodewithlowforwardvoltage
designedforsoftcommutationonly
•TRENCHSTOPTMtechnologyapplicationsoffers:
-verytightparameterdistribution
-highruggedness,temperaturestablebehavior
-lowVCEsat
-easyparallelswitchingcapabilityduetopositive
temperaturecoefficientinVCEsat
•LowEMI
•QualifiedaccordingtoJESD-022fortargetapplications
•Pb-freeleadplating;RoHScompliant
•CompleteproductspectrumandPSpiceModels:
http://www.infineon.com/igbt/
C
G
E
Applications:
•Inductivecooking
•Inverterizedmicrowaveovens
•Resonantconverters
•Softswitchingapplications
G
C
E
KeyPerformanceandPackageParameters
Type
VCE IC VCEsat,Tvj=25°C
IHW15N120R3
1200V 15A
1.48V
Tvjmax
175°C
Marking
H15R1203
Package
PG-TO247-3
2 Rev.2.4,2015-01-26



Part Number H15R1203
Description Reverse conducting IGBT
Maker Infineon Technologies - Infineon Technologies
Total Page 15 Pages
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