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Huashan
Huashan


H1270

PNP SIlicon Transistor



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H1270 pdf
Shantou Huashan Electronic Devices Co.,Ltd.
PNP SILICON TRANSISTOR
H1270
CENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION
ABSOLUTE MAXIMUM RATINGSTa=25℃)
Tstg——Storage Temperature………………………… -55~150
Tj——Junction Temperature…………………………………150
PC——Collector Dissipation…………………………………500mW
VCBO——Collector-Base Voltage………………………………-35V
VCEO——Collector-Emitter Voltage……………………………-30V
VEBO——Emitter-Base Voltage………………………………-5V
IC——Collector Current……………………………………-500mA
TO-92
1EmitterE
2CollectorC
3BaseB
ELECTRICAL CHARACTERISTICSTa=25℃)
Symbol
Characteristics
Min Typ Max Unit
Test Conditions
ICBO Collector Cut-off Current
-100 nA VCB=-35V, IE=0
IEBO Emitter Cut-off Current
-100 nA VEB=-5V, IC=0
HFE1DC Current Gain
70 240 VCE=-1V, IC=-100mA
HFE2
25 VCE=-6V, IC=-400mA
VCE(sat) Collector- Emitter Saturation Voltage
-0.1 -0.25 V IC=-100mA, IB=-10mA
VBE Base-Emitter Voltage
-0.8 -1.0 V IC=-1A, IB=-100mA
fT Current Gain-Bandwidth Product
200 MHz VCE=-6V, IC=-20mA
Cob Output Capacitance
13 pF VCB=-6V, IE=0f=1MHz
hFE Classification
O
70—140
Y
120—240



Part Number H1270
Description PNP SIlicon Transistor
Maker Huashan - Huashan
Total Page 1 Pages
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