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IXYS
IXYS


H1200NC25F

Fast Symmetrical Gate Turn-Off Thyristor



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H1200NC25F pdf
WESTCODE
An IXYS Company
Date:- 5 Aug, 2004
Data Sheet Issue:- 2
Fast Symmetrical Gate Turn-Off Thyristor
Type H1200NC25#
Absolute Maximum Ratings
VDRM
VRSM
VRRM
VRSM
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1)
Non-repetitive peak off-state voltage, (note 1)
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
MAXIMUM
LIMITS
2500
2600
100-2000
100-2000
UNITS
V
V
V
V
ITGQM
Ls
IT(AV)M
IT(RMS)
ITSM
ITSM2
I2t
di/dtcr
PFGM
PRGM
IFGM
VRGM
toff
ton
Tjop
Tstg
RATINGS
Maximum peak turn-off current, (note 2)
Snubber loop inductance, ITM=ITGQM, (note 2)
Mean on-state current, Tsink=55°C (note 3)
Nominal RMS on-state current, 25°C (note 3)
Peak non-repetitive surge current tp=10ms
Peak non-repetitive surge current, (Note 4)
I2t capacity for fusing tp=10ms
Critical rate of rise of on-state current, (note 5)
Peak forward gate power
Peak reverse gate power
Peak forward gate current
Peak reverse gate voltage (note 6).
Minimum permissible off-time, ITM=ITGQM, (note 2)
Minimum permissible on-time
Operating temperature range
Storage temperature range
Notes:-
1) VGK=-2Volts.
2) Tj=125°C, VD=80%VDM, VDM<VDRM, diGQ/dt=20A/µs, CS=3µF.
3) Double-side cooled, single phase; 50Hz, 180° half-sinewave.
4) Half-sinewave, tp=2ms
5) For di/dt>1000A/µs, consult factory.
6) May exceed this value during turn-off avalanche period.
MAXIMUM
LIMITS
1200
0.3
670
1340
10.5
19
550
1000
210
8
140
18
80
20
-40 to +125
-40 to +150
UNITS
A
µH
A
A
kA
kA
kA2s
A/µs
W
kW
A
V
µs
µs
°C
°C
Data Sheet. Type H1200NC25# Issue 2
Page 1 of 15
August, 2004



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H1200NC25F pdf
WESTCODE An IXYS Company
Characteristics
Fast Symmetrical Gate Turn-Off Thyristor type H1200NC25#
Parameter
VTM Maximum peak on-state voltage
IL Latching current
IH Holding current.
dv/dtcr Critical rate of rise of off-state voltage
IDM Peak off state current
IRM Peak reverse current
IGKM Peak negative gate leakage current
VGT Gate trigger voltage
IGT Gate trigger current
td Delay time
tgt Turn-on time
tf Fall time
tgq Turn-off time
Igq Turn-off gate current
Qgq Turn-off gate charge
ttail Tail time
tgw Gate off-time (see note 3).
RthJK Thermal resistance junction to sink
F Mounting force
Wt Weight
MIN TYP MAX TEST CONDITIONS
UNITS
-
-
-
1000
-
-
-
3.0
15
15
-
-
-
-
3.3 IG=2A, IT=1200A
- Tj=25°C
- Tj=25°C
- VD=80%VDRM, VGR=-2V
50 Rated VDRM, VGR=-2V
100 Rated VRRM
200 VGR=-16V
V
A
A
V/µs
mA
mA
mA
- 1.0 - Tj=-40°C
- 0.9 - Tj=25°C
VD=25V, RL=25m
- 0.8 - Tj=125°C
V
V
V
- 3.0 8.0 Tj=-40°C
- 0.6 2.5 Tj=25°C
VD=25V, RL=25m
- 0.06 0.5 Tj=125°C
A
A
A
VD=50%VDRM, ITGQ=1200A, IGM=40A, diG/dt=20A/µs µs
- 1.0 -
Tj=25°C, di/dt=300A/µs, (10%IGM to 90%VD)
- 3.0 7.0 Conditions as for td, (10%IGM to 10%VD)
µs
VD=80%VDRM, ITGQ=1200A, CS=3µF,
- 0.8 -
diGQ/dt=40A/µs, VGR=-16V, (90%ITGQ to 10%IVD)
µs
- 12 13 Conditions as for tf, (10%IGQ to 10%ITGQ)
- 250 - Conditions as for tf
- 1600 2000 Conditions as for tf
- 40 60 Conditions as for tf, (10%ITGQ to ITGQ<1A)
150 -
- Conditions as for tf
µs
A
µC
µs
µs
- - 0.027 Double side cooled
K/W
- - 0.070 Cathode side cooled
K/W
- - 0.045 Anode side cooled
K/W
15 - 25 (see note 2)
kN
- 480 -
g
Notes:-
1) Unless otherwise indicated Tj=125oC.
2) For other clamping forces, consult factory.
3) The gate off-time is the period during which the gate circuit is
required to remain low impedance to allow for the passage
of tail current.
Data Sheet. Type H1200NC25# Issue 2
Page 2 of 15
August, 2004



Part Number H1200NC25F
Description Fast Symmetrical Gate Turn-Off Thyristor
Maker IXYS - IXYS
Total Page 15 Pages
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